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NCP301LSN16T1

Onsemi

NCP301LSN16T1 by Onsemi

NCP301LSN16T1 by Onsemi is a Power Management IC with Vsup of 1.5V, Isup of 0.0013mA, and V range of 0.8-10V. Ideal for automotive applications due to its small size, dual terminals, and wide operating temperature range from -40 to 125 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,608 parts In-Stock

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Digiode

USA . 388 parts In-Stock

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Vigor

Singapore . 804 parts In-Stock

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$0.190

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804

$0.190

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Ampacity Inc.

Singapore . 213 parts In-Stock

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$5.500

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213

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AZTECH Wire

Italy . 820 parts In-Stock

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$11.520

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820

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Component Stockers USA

USA . 255 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 10,524 parts In-Stock

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Problanco Electronics

Mexico . 6,320 parts In-Stock

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UHIMA Technologies

Türkiye . 960 parts In-Stock

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Kulean Microsystems

USA . 604 parts In-Stock

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Corohmni

South Africa . 237 parts In-Stock

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Microchip USA

USA . 124 parts In-Stock

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SupplyDigital Components

Austria . 67 parts In-Stock

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Corphita

USA . 51 parts In-Stock

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TANS Electronics

Latvia . 10 parts In-Stock

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Overview

Unlock the potential of your power management system with the NCP301LSN16T1 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Power Management ICs that are essential for a wide range of applications. With a compact design and a wide operating temperature range, this product offers unparalleled value and reliability for your projects. Trust Onsemi to provide the power supply support circuit you need to take your designs to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides good durability and protection for the IC, ensuring a longer lifespan and reliable performance.

Surface Mount: YES

Surface mount capability allows for easy and convenient installation on PCBs, saving time and effort in the assembly process.

Nominal Supply Voltage (Vsup): 1.5 V

The nominal supply voltage of 1.5V ensures compatibility with a wide range of applications, making it versatile for various power management needs.

No. of Terminals: 5

Having 5 terminals provides flexibility in connectivity options, allowing for more versatile circuit designs and configurations.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125 °C, this IC can withstand harsh environmental conditions and maintain stable performance even in elevated temperatures.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40 °C ensures reliable operation even in cold environments, making it suitable for a wide range of applications.

Width (mm): 1.5 mm

Compact width of 1.5mm allows for space-efficient PCB layout, making it ideal for applications where board real estate is limited.

Temperature Grade: AUTOMOTIVE

Designed for automotive applications, this IC meets the stringent requirements for temperature, reliability, and performance in automotive environments.

Maximum Supply Current (Isup): 0.0013 mA

Low maximum supply current of 0.0013mA helps in minimizing power consumption and enhancing energy efficiency, making it suitable for battery-powered devices.

Technical Specifications

Power Management ICs NCP301LSN16T1 attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Additional Features:

DETECTION THRESHOLD VOLTAGE IS 1.6V

Adjustable Threshold:

NO

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e0

Length:

3 mm

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

235

Power Supplies (V):

0.8/10

Qualification:

Not Qualified

Maximum Seated Height:

1.1 mm

Sub-Category:

Power Management Circuits

Maximum Supply Current (Isup):

.0013 mA

Maximum Supply Voltage (Vsup):

10 V

Minimum Supply Voltage (Vsup):

.8 V

Nominal Supply Voltage (Vsup):

1.5 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Nominal Threshold Voltage (V):

+1.6V

Width (mm):

1.5 mm

Trade Compliance

NCP301LSN16T1 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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