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NC7WZ17FHX-L22175

Onsemi

NC7WZ17FHX-L22175 by Onsemi

The Onsemi NC7WZ17FHX-L22175 is a CMOS Logic Gates IC with 2 functions, 13.1 ns propagation delay, and 1.8V nominal voltage. Ideal for applications requiring fast signal processing in compact spaces due to its small outline package style and Schmitt Trigger technology.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Flip Electronics

USA . 135,000 parts In-Stock

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DigiKey Marketplace

USA . 91,000 parts In-Stock

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Vyrian

USA . 3,017 parts In-Stock

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Digiode

USA . 1,539 parts In-Stock

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AZTECH Wire

Italy . 1,056 parts In-Stock

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$10.490

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Microchip USA

USA . 3,709 parts In-Stock

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$28.417

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Problanco Electronics

Mexico . 6,027 parts In-Stock

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SupplyDigital Components

Austria . 4,172 parts In-Stock

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TANS Electronics

Latvia . 1,596 parts In-Stock

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Corphita

USA . 1,115 parts In-Stock

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UHIMA Technologies

Türkiye . 985 parts In-Stock

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Kulean Microsystems

USA . 342 parts In-Stock

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Corohmni

South Africa . 100 parts In-Stock

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Overview

Discover the cutting-edge NC7WZ17FHX-L22175 by Onsemi, a high-quality logic gate that delivers exceptional performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this product is perfect for a wide range of applications. From its compact design to its efficient operation, this logic gate offers unparalleled value and benefits to customers. Experience seamless functionality and enhanced productivity with the NC7WZ17FHX-L22175, setting new standards in the world of logic gates.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material is durable and reliable, making the product suitable for a variety of environments.

Propagation Delay At Nominal Supply: 13.1 ns

With a fast propagation delay, this logic gate ensures quick response times in circuit operations.

Surface Mount: YES

The surface mount feature allows for easy and efficient installation on circuit boards.

Nominal Supply Voltage / Vsup (V): 1.8

The low nominal supply voltage of 1.8V helps in reducing power consumption and heat generation.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature ensures the product can withstand a wide range of temperature conditions.

Technical Specifications

Logic Gates NC7WZ17FHX-L22175 attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

LVC/LCX/Z

JESD-30 Code:

S-PDSO-N6

Length:

1 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

32 Amp

No. of Functions:

2

No. of Inputs:

1

No. of Terminals:

6

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC6,.04,14

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Packing Method:

TR

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Power Supply Current (ICC):

100 mA

Propagation Delay At Nominal Supply:

13.1 ns

Propagation Delay (tpd):

15.8 ns

Schmitt Trigger:

YES

Maximum Seated Height:

.55 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Terminal Form:

Terminal Pitch:

.35 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

1 mm

Trade Compliance

NC7WZ17FHX-L22175 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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