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MZP4750ARLG

Onsemi

MZP4750ARLG by Onsemi

MZP4750ARLG by Onsemi is a Zener diode with 27V nominal reference voltage, 5% max voltage tolerance, and 1W max power dissipation. It is used in applications requiring precise voltage regulation like power supplies and voltage references.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Chip Stock

USA . 58,000 parts In-Stock

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Vyrian

USA . 8,484 parts In-Stock

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Digiode

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AZTECH Wire

Italy . 739 parts In-Stock

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$22.060

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739

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TANS Electronics

Latvia . 6,290 parts In-Stock

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SupplyDigital Components

Austria . 5,571 parts In-Stock

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Kulean Microsystems

USA . 5,357 parts In-Stock

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Problanco Electronics

Mexico . 5,047 parts In-Stock

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Corphita

USA . 1,088 parts In-Stock

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UHIMA Technologies

Türkiye . 550 parts In-Stock

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Corohmni

South Africa . 440 parts In-Stock

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Overview

Discover the MZP4750ARLG by Onsemi, a premium Zener diode that promises top-notch quality and reliability. With Onsemi's reputation for excellence in manufacturing, you can trust that this product delivers superior performance and durability. Ideal for a wide range of applications, this Zener diode offers customers unmatched value with its precise voltage regulation and protection capabilities. Say goodbye to fluctuating voltages and hello to seamless operations with the MZP4750ARLG. Choose quality, choose Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good protection for the diode, making it durable and long-lasting.

Working Test Current: 9.5 mA

The high working test current ensures reliable performance under various operating conditions.

Maximum Voltage Tolerance: 5 %

The low voltage tolerance ensures accurate voltage regulation, making it suitable for precision applications.

Maximum Power Dissipation: 1 W

With a high power dissipation rating, this diode can handle high power loads without overheating.

Nominal Reference Voltage: 27 V

The specific reference voltage of 27 V makes this diode ideal for circuits requiring precise voltage regulation at this level.

Technical Specifications

Zener Diodes MZP4750ARLG attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

35 ohm

JEDEC-95 Code:

DO-41

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

1 W

Qualification:

Not Qualified

Nominal Reference Voltage:

27 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

NO

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5 %

Working Test Current:

9.5 mA

Trade Compliance

MZP4750ARLG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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