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MZP4741ARLG

Onsemi

MZP4741ARLG by Onsemi

The Onsemi MZP4741ARLG is a Zener diode with 11V nominal reference voltage, 23mA test current, and 5% voltage tolerance. It operates at up to 200 °C, has a dynamic impedance of 8 ohm, and can dissipate up to 1W power. Ideal for applications requiring precise voltage regulation in harsh environments.

Median Price

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Lifecycle Status

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2

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1k+

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Vyrian

USA . 7,165 parts In-Stock

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Digiode

USA . 426 parts In-Stock

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Ampacity Inc.

Singapore . 701 parts In-Stock

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$1.010

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$1.010

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AZTECH Wire

Italy . 428 parts In-Stock

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Component Stockers USA

USA . 732 parts In-Stock

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$99.990

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Kulean Microsystems

USA . 6,396 parts In-Stock

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TANS Electronics

Latvia . 4,682 parts In-Stock

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SupplyDigital Components

Austria . 4,294 parts In-Stock

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Problanco Electronics

Mexico . 2,864 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 657 parts In-Stock

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Corohmni

South Africa . 175 parts In-Stock

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Overview

Enhance your electronic projects with the MZP4741ARLG Zener Diode by Onsemi. Known for their top-quality components, Onsemi delivers reliability and precision in every product they create. Zener diodes are essential for regulating voltage in circuits, providing stable output even in varying conditions. With a nominal reference voltage of 11V and a maximum power dissipation of 1W, this Zener diode ensures optimal performance and protection for your devices. Trust Onsemi to bring you the best in semiconductor technology for all your engineering needs.

Feature Benefit Bullets

Config: SINGLE

SINGLE configuration simplifies the circuit design and makes it easier to use in various applications.

Working Test Current: 23 mA

Ability to handle a test current of 23 mA ensures reliable performance in different operating conditions.

Maximum Voltage Tolerance: 5 %

Tight voltage tolerance of 5% ensures precise voltage regulation in the circuit.

Maximum Operating Temperature: 200 °C

Operates at high temperatures up to 200 °C, making it suitable for demanding environments.

Maximum Dynamic Impedance: 8 ohm

Low dynamic impedance of 8 ohms ensures efficient voltage regulation with minimal loss.

Terminal Finish: TIN

TIN terminal finish provides good solderability and ensures reliable connections in the circuit.

Maximum Power Dissipation: 1 W

High power dissipation of 1 watt allows the diode to handle high power loads without damage.

Peak Reflow Temperature °C: 260

Can withstand peak reflow temperature of 260 °C during the soldering process without any degradation.

Diode Type: ZENER DIODE

Being a Zener diode, it provides precise voltage regulation and protection in the circuit.

Nominal Reference Voltage: 11 V

Offers a stable nominal reference voltage of 11V for accurate voltage regulation in the circuit.

Technical Specifications

Zener Diodes MZP4741ARLG attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Type:

Maximum Dynamic Impedance:

8 ohm

JESD-609 Code:

e3

No. of Elements:

1

Maximum Operating Temperature:

200 Cel

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

1 W

Nominal Reference Voltage:

11 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

NO

Terminal Finish:

TIN

Maximum Voltage Tolerance:

5 %

Working Test Current:

23 mA

Trade Compliance

MZP4741ARLG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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