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MCR22-6G

Onsemi

MCR22-6G by Onsemi

MCR22-6G by Onsemi is a single SCR with a max on-state current of 1.5A and repetitive peak off-state voltage of 400V. It is used in applications requiring precise control over AC power, such as motor speed control and lighting dimming systems. The device operates within a temperature range of -40 to 110 °C, making it suitable for various industrial environments.

Median Price

$0.180

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 7,398 parts In-Stock

1+ parts

$0.180

100+ parts

$0.180

1k+ parts

$0.170

10k+ parts

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7,398

$0.180

$0.180

$0.170

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DF Sales Co.

USA . 97 parts In-Stock

1+ parts

$1.660

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97

$1.660

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DF Sales Co.

USA . 97 parts In-Stock

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$1.660

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97

$1.660

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Vyrian

USA . 3,724 parts In-Stock

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3,724

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Digiode

USA . 1,478 parts In-Stock

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1,478

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4 Star Electronics, Inc.

USA . 434 parts In-Stock

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434

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Distributors (Availability)

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Corohmni

South Africa . 236 parts In-Stock

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$1.660

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236

$1.660

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Advanced Electronics

New Zealand . 500 parts In-Stock

1+ parts

$4.734

100+ parts

$4.308

1k+ parts

$3.882

10k+ parts

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500

$4.734

$4.308

$3.882

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AZTECH Wire

Italy . 504 parts In-Stock

1+ parts

$14.800

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504

$14.800

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SupplyDigital Components

Austria . 7,963 parts In-Stock

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Kulean Microsystems

USA . 6,731 parts In-Stock

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6,731

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Problanco Electronics

Mexico . 5,130 parts In-Stock

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TANS Electronics

Latvia . 3,739 parts In-Stock

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3,739

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Corphita

USA . 2,495 parts In-Stock

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2,495

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Perfect Parts

USA . 2,132 parts In-Stock

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2,132

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UHIMA Technologies

Türkiye . 528 parts In-Stock

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528

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Overview

Unlock the power of efficiency and reliability with the MCR22-6G by Onsemi. As a leading manufacturer in the industry, Onsemi guarantees top-notch quality and performance. This Silicon Controlled Rectifier (SCR) is perfect for a wide range of applications, offering customers exceptional value and benefits. With a single configuration, high on-state current, and low leakage current, the MCR22-6G ensures seamless operation and durability. Trust Onsemi to deliver cutting-edge technology that meets all your needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides excellent protection for the internal components of the SCR, ensuring durability and reliability in various operating conditions.

Maximum DC Gate Trigger Current: 0.2 mA

Low gate trigger current allows for precise control and minimal power consumption, making the SCR efficient in performance.

Configuration: SINGLE

Single configuration simplifies installation and reduces complexity in circuit design, making it easy to integrate the SCR into existing systems.

Non Repetitive Peak On-state Current: 15 A

High peak on-state current capability allows the SCR to handle sudden surges of current, making it suitable for high-power applications.

Maximum On-state Current: 1.5 A

This optimal on-state current rating ensures reliable performance and safe operation within the specified limits.

Repetitive Peak Reverse Voltage: 400 V

The high reverse voltage rating provides robust protection against reverse voltage spikes, enhancing the SCR's reliability in harsh environments.

Maximum Operating Temperature: 110 °C

With a high maximum operating temperature, the SCR can withstand elevated temperatures without compromising performance, making it versatile for various industrial applications.

Technical Specifications

Silicon Controlled Rectifiers (SCR) MCR22-6G attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Onsemi

Specs

Nominal Circuit Commutated Turn-off Time:

40 us

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

25 V/us

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

.8 V

Maximum Holding Current:

5 mA

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

Maximum Leakage Current:

.2 mA

Non Repetitive Peak On-state Current:

15 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

1.5 A

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum RMS On-state Current:

1.5 A

Repetitive Peak Off-state Voltage:

400 V

Repetitive Peak Reverse Voltage:

400 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

MCR22-6G Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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