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MCR225-10FP

Onsemi

MCR225-10FP by Onsemi

MCR225-10FP by Onsemi is a single SCR with max DC gate trigger current of 40mA, non-repetitive peak on-state current of 300A, and max RMS on-state current of 25A. It is used in applications requiring high voltage switching such as power supplies and motor control systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 1,858 parts In-Stock

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Digiode

USA . 974 parts In-Stock

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LittleDiode

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Kulean Microsystems

USA . 5,681 parts In-Stock

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SupplyDigital Components

Austria . 5,381 parts In-Stock

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Problanco Electronics

Mexico . 757 parts In-Stock

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Corphita

USA . 478 parts In-Stock

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Corohmni

South Africa . 300 parts In-Stock

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TANS Electronics

Latvia . 259 parts In-Stock

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UHIMA Technologies

Türkiye . 155 parts In-Stock

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Overview

Discover the power and reliability of the MCR225-10FP Silicon Controlled Rectifier by Onsemi. With a maximum DC gate trigger current of 40 mA and a non-repetitive peak on-state current of 300 A, this product is perfect for applications requiring high performance and durability. Whether you're in the industrial, automotive, or consumer electronics industry, this SCR offers value and efficiency. Trust Onsemi's reputation for quality and innovation, and experience the benefits of the MCR225-10FP in your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection for the SCR, making it suitable for various environmental conditions.

Maximum DC Gate Trigger Current: 40 mA

The high gate trigger current allows for reliable and consistent switching of the SCR, ensuring efficient performance.

Configuration: SINGLE

The single configuration simplifies the design and installation process, making it easy to integrate the SCR into different systems.

Non Repetitive Peak On-state Current: 300 A

With a high peak on-state current, this SCR can handle heavy loads and provide reliable operation in high-power applications.

Maximum On-state Current: 25 A

The maximum on-state current rating allows for optimal performance and reliability in various electrical circuits and systems.

Repetitive Peak Reverse Voltage: 800 V

The high reverse voltage rating ensures the SCR can withstand voltage spikes and surges, enhancing its overall durability and reliability.

Maximum RMS On-state Current: 25 A

The maximum RMS on-state current rating indicates the SCR's ability to handle continuous current flow without overheating or degrading performance.

Technical Specifications

Silicon Controlled Rectifiers (SCR) MCR225-10FP attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Onsemi

Specs

Case Connection:

Nominal Circuit Commutated Turn-off Time:

15 us

Configuration:

Maximum DC Gate Trigger Current:

40 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

40 mA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

Maximum Leakage Current:

2 mA

Non Repetitive Peak On-state Current:

300 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

25 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

25 A

Repetitive Peak Off-state Voltage:

800 V

Repetitive Peak Reverse Voltage:

800 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

MCR225-10FP Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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