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MCR218-2

Onsemi

MCR218-2 by Onsemi

MCR218-2 by Onsemi is a SCR with max DC gate trigger current of 25mA, non-repetitive peak on-state current of 100A, and max on-state current of 8A. It is used in applications requiring reliable switching at temperatures ranging from -40 to 125 °C.

Median Price

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Lifecycle Status

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Vyrian

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Elcom Components

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Digiode

USA . 319 parts In-Stock

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Electronics Depot

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LWI Electronics Inc

India . 42 parts In-Stock

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Tech-Mark Corp

USA . 36 parts In-Stock

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Lakeland Logistics Inc

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Electronic Expediters

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Bristol Electronics

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LittleDiode

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ACDS - Activité Composants Distribution Service

France . 6 parts In-Stock

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Problanco Electronics

Mexico . 3,502 parts In-Stock

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Kulean Microsystems

USA . 2,110 parts In-Stock

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TANS Electronics

Latvia . 1,180 parts In-Stock

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SupplyDigital Components

Austria . 623 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 346 parts In-Stock

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Corohmni

South Africa . 325 parts In-Stock

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A-Plus Industry Inc.

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Overview

Unleash the power of innovation with the MCR218-2 from Onsemi. As a leading manufacturer of Silicon Controlled Rectifiers, Onsemi sets the standard for quality and reliability in the industry. The MCR218-2 is a versatile solution for a wide range of applications, offering customers value and performance like never before. Experience the benefits of seamless operation, high efficiency, and unmatched durability with the MCR218-2. Upgrade your systems today and discover the advantages that Onsemi brings to the table.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material makes the SCR lightweight and durable, making it ideal for a variety of applications.

Maximum DC Gate Trigger Current: 25 mA

This high trigger current ensures reliable and consistent performance, allowing for precise control of the SCR.

Configuration: SINGLE

The single configuration simplifies the setup and operation of the SCR, making it user-friendly for both experienced professionals and beginners.

Non Repetitive Peak On-state Current: 100 A

With a high peak on-state current, this SCR is capable of handling heavy loads and sudden surges in power, making it suitable for demanding applications.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for easy installation and fitting in tight spaces, making it versatile for various installations.

Terminal Form: THROUGH-HOLE

The through-hole terminals provide a secure and reliable connection, ensuring stable performance and reducing the risk of disconnection.

Maximum On-state Current: 8 A

This high current rating allows the SCR to handle a wide range of loads, making it versatile for different applications.

Maximum Leakage Current: 2 mA

The low leakage current of this SCR helps to improve energy efficiency and reduce power wastage, making it a cost-effective choice.

Repetitive Peak Reverse Voltage: 50 V

The high reverse voltage rating ensures protection against reverse polarity and helps to safeguard the SCR from damage.

No. of Terminals: 3

The three terminals provide flexibility in connection options, allowing for various circuit configurations and customization.

Package Style (Meter): FLANGE MOUNT

The flange mount style makes installation and mounting of the SCR quick and easy, saving time and effort during assembly.

Maximum Operating Temperature: 125 °C

With a high operating temperature range, this SCR can withstand harsh environmental conditions and excessive heat, ensuring reliable performance.

Trigger Device Type: SCR

Being an SCR (Silicon Controlled Rectifier), this device offers precise control over switching and power regulation, making it suitable for a wide range of applications.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature allows the SCR to function in cold environments without any loss in performance, making it versatile for various settings.

Terminal Finish: TIN LEAD

The tin lead finish on the terminals provides excellent conductivity and corrosion resistance, ensuring stable performance and longevity of the SCR.

Terminal Position: SINGLE

The single terminal position simplifies the installation and wiring of the SCR, reducing complexity and making it easier to integrate into existing systems.

Maximum RMS On-state Current: 8 A

With a high RMS on-state current rating, this SCR can handle continuous loads without overheating or performance degradation, ensuring long-term reliability.

Maximum DC Gate Trigger Voltage: 1.5 V

The low trigger voltage requirement allows for precise and efficient control over the SCR, enabling quick response times and optimized performance.

Case Connection: ANODE

The anode case connection simplifies the installation and wiring process, ensuring a secure and reliable connection for stable performance.

Repetitive Peak Off-state Voltage: 50 V

The high off-state voltage rating provides protection against voltage spikes and surges, ensuring the SCR remains safe and operational in varying conditions.

Maximum Holding Current: 30 mA

With a high holding current, this SCR can maintain the on-state condition without continuous gate signal, making it reliable for long-term operation.

Technical Specifications

Silicon Controlled Rectifiers (SCR) MCR218-2 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Onsemi

Specs

Case Connection:

Configuration:

Maximum DC Gate Trigger Current:

25 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

30 mA

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

Maximum Leakage Current:

2 mA

Non Repetitive Peak On-state Current:

100 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

8 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

8 A

Repetitive Peak Off-state Voltage:

50 V

Repetitive Peak Reverse Voltage:

50 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

MCR218-2 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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