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MCR218-10FP

Onsemi

MCR218-10FP by Onsemi

MCR218-10FP by Onsemi is a single SCR with max DC gate trigger current of 25mA and non-repetitive peak on-state current of 80A. It has a package style of flange mount and is ideal for applications requiring an isolated case connection, such as power control systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,496 parts In-Stock

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Vyrian

USA . 528 parts In-Stock

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SupplyDigital Components

Austria . 8,165 parts In-Stock

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TANS Electronics

Latvia . 5,566 parts In-Stock

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Kulean Microsystems

USA . 3,471 parts In-Stock

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Problanco Electronics

Mexico . 2,030 parts In-Stock

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UHIMA Technologies

Türkiye . 844 parts In-Stock

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Corphita

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Corohmni

South Africa . 316 parts In-Stock

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Overview

Discover the MCR218-10FP by Onsemi, a top-quality Silicon Controlled Rectifier that offers unmatched performance and reliability. With a maximum on-state current of 8A and a non-repetitive peak on-state current of 80A, this SCR is perfect for a wide range of applications. Whether you're looking for a trigger device for motor control or power switching, this product delivers superior results. Trust in Onsemi's expertise in semiconductor manufacturing to provide you with a product that meets your needs and exceeds your expectations. Elevate your projects with the MCR218-10FP and experience the value and benefits it brings to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, making the product reliable for long-term use.

Maximum DC Gate Trigger Current: 25 mA

Allows for precise control over the switching operation of the SCR, ensuring efficient performance.

Configuration: SINGLE

Simplified design and installation process, ideal for applications requiring a single SCR.

Maximum On-state Current: 8 A

Suitable for handling moderate current loads, making it versatile for a range of applications.

Repetitive Peak Reverse Voltage: 800 V

Provides a high level of voltage protection, making the product suitable for a variety of industrial applications.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, ensuring reliable operation in harsh environments.

Trigger Device Type: SCR

Utilizes Silicon Controlled Rectifier technology for efficient switching and control of electrical current.

Repetitive Peak Off-state Voltage: 800 V

Ensures effective isolation of the circuit, enhancing safety and protecting connected devices.

Nominal Circuit Commutated Turn-off Time: 15 us

Provides fast turn-off time for quick response and control in switching applications.

Technical Specifications

Silicon Controlled Rectifiers (SCR) MCR218-10FP attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Onsemi

Specs

Case Connection:

Nominal Circuit Commutated Turn-off Time:

15 us

Configuration:

Maximum DC Gate Trigger Current:

25 mA

Maximum DC Gate Trigger Voltage:

2.5 V

Maximum Holding Current:

30 mA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

Maximum Leakage Current:

2 mA

Non Repetitive Peak On-state Current:

80 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

8 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

8 A

Repetitive Peak Off-state Voltage:

800 V

Repetitive Peak Reverse Voltage:

800 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

MCR218-10FP Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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