Loading...

MCR218-8

Onsemi

MCR218-8 by Onsemi

MCR218-8 by Onsemi is a single SCR with 600V repetitive peak reverse voltage, 80A non-repetitive peak on-state current, and 25mA max DC gate trigger current. It is used in applications requiring high power control such as industrial motor drives and power supplies.

Median Price

$2.805

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 61 parts In-Stock

1+ parts

$2.805

100+ parts

-

1k+ parts

-

10k+ parts

-

61

$2.805

-

-

-

Vyrian

USA . 908 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

908

-

-

-

-

Digiode

USA . 187 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

187

-

-

-

-

PC Components Company LLC

USA . 16 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

16

-

-

-

-

Bristol Electronics

USA . 16 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

16

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

TANS Electronics

Latvia . 8,167 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,167

-

-

-

-

Kulean Microsystems

USA . 3,178 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,178

-

-

-

-

Corphita

USA . 442 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

442

-

-

-

-

SupplyDigital Components

Austria . 305 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

305

-

-

-

-

Corohmni

South Africa . 281 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

281

-

-

-

-

Problanco Electronics

Mexico . 276 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

276

-

-

-

-

UHIMA Technologies

Türkiye . 135 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

135

-

-

-

-

Overview

Upgrade your electronics with the MCR218-8 by Onsemi, a top-quality Silicon Controlled Rectifier that offers reliable performance and durability. Manufactured by Onsemi, a trusted name in the industry, this SCR is perfect for a variety of applications. From power supplies to motor control, the MCR218-8 delivers exceptional value with its high on-state current and low leakage current. Trust Onsemi to provide you with the best in electronic components, and experience the benefits of superior quality and performance with the MCR218-8.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the SCR.

Maximum DC Gate Trigger Current: 25 mA

Allows for precise and efficient control of the gate triggering, enhancing the overall performance of the SCR.

Configuration: SINGLE

Simplifies the setup and operation of the SCR, making it user-friendly and easy to integrate into different systems.

Non Repetitive Peak On-state Current: 80 A

Can handle high current loads without overheating or malfunctioning, making it suitable for demanding applications.

Maximum On-state Current: 8 A

Provides ample current-carrying capacity for various electrical loads, ensuring the SCR can handle a wide range of applications.

Maximum Leakage Current: 2 mA

Ensures minimal power loss when the SCR is in the off state, improving efficiency and reducing energy consumption.

Repetitive Peak Reverse Voltage: 600 V

Offers high reverse voltage capability, making the SCR suitable for use in circuits where reverse voltage protection is crucial.

Maximum Operating Temperature: 125 °C

Can operate reliably in high-temperature environments, expanding the range of applications where the SCR can be used.

Minimum Operating Temperature: -40 °C

Can operate in extreme cold conditions without performance degradation, ensuring versatility in various operating environments.

Maximum RMS On-state Current: 8 A

Provides continuous current-carrying capacity for steady-state operation, allowing the SCR to handle prolonged high-current loads.

Maximum DC Gate Trigger Voltage: 1.5 V

Requires low triggering voltage for gate control, enhancing efficiency and reducing power consumption in the triggering circuit.

Repetitive Peak Off-state Voltage: 600 V

Offers high off-state voltage capability, allowing the SCR to block voltage spikes and transients effectively in the off state.

Minimum Critical Rate of Rise of Off-state Voltage: 100 V/us

Provides fast response to sudden voltage changes, enhancing transient protection and ensuring the stability of the connected circuit.

Maximum Holding Current: 30 mA

Maintains conduction in the off state after triggering, ensuring proper operation and avoiding false turn-offs.

Technical Specifications

Silicon Controlled Rectifiers (SCR) MCR218-8 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Onsemi

Specs

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

100 V/us

Maximum DC Gate Trigger Current:

25 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

30 mA

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

Maximum Leakage Current:

2 mA

Non Repetitive Peak On-state Current:

80 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

8 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

8 A

Repetitive Peak Off-state Voltage:

600 V

Repetitive Peak Reverse Voltage:

600 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

MCR218-8 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20