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MC33340DR2G

Onsemi

MC33340DR2G by Onsemi

MC33340DR2G by Onsemi is a Power Management IC with VOLTAGE-MODE control, 760 kHz switching frequency, and 0.05 A output current. Ideal for POWER SUPPLY SUPPORT CIRCUITS in applications requiring 3-18V input voltage range and compact SMALL OUTLINE package.

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3

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1k+

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Chip Stock

USA . 9,610 parts In-Stock

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Advanced Electronics

New Zealand . 20 parts In-Stock

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$4.896

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$4.455

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AZTECH Wire

Italy . 1,183 parts In-Stock

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Component Stockers USA

USA . 669 parts In-Stock

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$99.990

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GreenTree Electronics

Israel . 50,000 parts In-Stock

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RC Electronics

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Kulean Microsystems

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Authorized Procurement Solutions

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A-Z Elektronik GmbH

Germany . 4,668 parts In-Stock

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Microchip USA

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TANS Electronics

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Austria . 1,385 parts In-Stock

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UHIMA Technologies

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Overview

Unlock the power of efficient energy management with the MC33340DR2G from Onsemi. This high-quality Power Management IC offers unparalleled performance and reliability, making it the ideal choice for a wide range of applications. With its advanced control mode and pulse width modulation technique, this IC delivers precise voltage regulation and optimal power supply support. Say goodbye to inefficiencies and hello to seamless power management with the MC33340DR2G by Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used in the package body provides good thermal performance and durability, making the product reliable for long-term use.

Surface Mount: YES

Being surface mountable, this product is easy to integrate into circuit boards, saving space and making assembly more efficient.

Package Shape: RECTANGULAR

The rectangular package shape allows for easier placement and orientation during assembly, improving the overall usability of the product.

No. of Terminals: 8

With 8 terminals, this power management IC offers multiple connection points for external circuitry, enabling versatile applications and configurations.

Package Style (Meter): SMALL OUTLINE

The small outline package style of this IC ensures compatibility with various PCB layouts and designs, enhancing flexibility in system integration.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85 °C, this power management IC can withstand demanding thermal conditions, ensuring reliable performance in harsh environments.

Control Mode: VOLTAGE-MODE

The voltage-mode control allows for precise regulation of power output, ensuring stable and efficient operation of the connected devices.

Minimum Operating Temperature: -25 °C

The low minimum operating temperature of -25 °C enables this IC to function effectively even in cold environments, expanding its usability in various applications.

Terminal Finish: TIN

The terminal finish of TIN provides good conductivity and corrosion resistance, ensuring reliable electrical connections and long-term performance.

Terminal Position: DUAL

Having dual terminal positions allows for more flexible PCB layout options, making it easier to route connections and optimize the overall design.

Maximum Seated Height: 1.75 mm

The low maximum seated height of 1.75 mm minimizes the overall profile of the IC, making it suitable for applications with space constraints.

Width (mm): 3.9 mm

The compact width of 3.9 mm makes this power management IC ideal for use in compact electronic devices or systems where space is limited.

Other IC type: POWER SUPPLY SUPPORT CIRCUIT

Being a power supply support circuit, this IC provides essential functions for regulating and controlling power delivery, making it a key component in power management systems.

Nominal Input Voltage: 6 V

The nominal input voltage of 6 V makes this IC suitable for applications that require stable power input within this voltage range.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260 °C, this IC can withstand the high temperatures of reflow soldering during assembly, ensuring reliable solder joints.

Length: 4.9 mm

The length of 4.9 mm contributes to the overall compactness of this IC, making it suitable for use in space-constrained designs.

Maximum Switching Frequency: 760 kHz

A high maximum switching frequency of 760 kHz enables fast and efficient power regulation, which is beneficial for high-performance applications requiring rapid response times.

Maximum Output Current: 0.05 A

The maximum output current of 0.05 A allows this IC to deliver sufficient power to connected devices, making it suitable for applications with low power requirements.

Terminal Form: GULL WING

The gull wing terminal form provides mechanical strength and ease of soldering during assembly, ensuring reliable electrical connections and long-term durability.

Control Technique: PULSE WIDTH MODULATION

Using pulse width modulation control technique allows for precise and efficient regulation of power output, ensuring stable and accurate voltage control.

Switcher Config: SINGLE

With a single switcher configuration, this IC offers a simple and cost-effective solution for power management applications that do not require multiple switcher setups.

Terminal Pitch: 1.27 mm

The terminal pitch of 1.27 mm enables easy and reliable connection of the IC to the PCB, facilitating efficient assembly and maintenance.

Minimum Input Voltage: 3 V

The minimum input voltage of 3 V allows this IC to operate effectively with low-voltage power sources, making it versatile for use in different power supply scenarios.

Maximum Input Voltage: 18 V

With a maximum input voltage of 18 V, this power management IC can accept a wide range of input voltages, making it suitable for a variety of power supply applications.

Technical Specifications

Power Management ICs MC33340DR2G attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Control Mode:

VOLTAGE-MODE

Control Technique:

PULSE WIDTH MODULATION

Maximum Input Voltage:

18 V

Minimum Input Voltage:

3 V

Nominal Input Voltage:

6 V

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Length:

4.9 mm

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Maximum Output Current:

.05 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Surface Mount:

YES

Switcher Config:

SINGLE

Maximum Switching Frequency:

760 kHz

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width (mm):

3.9 mm

Trade Compliance

MC33340DR2G Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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