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MC10H424FNR2G

Onsemi

MC10H424FNR2G by Onsemi

MC10H424FNR2G by Onsemi is a voltage level translator with 4 functions, operating at 5.25V max supply voltage and -5.2V min supply voltage. It has a delay of 2.3ns, suitable for TTL to ECL translation applications in commercial extended temperature environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

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Digiode

USA . 416 parts In-Stock

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Vyrian

USA . 249 parts In-Stock

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Kulean Microsystems

USA . 8,066 parts In-Stock

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Problanco Electronics

Mexico . 7,443 parts In-Stock

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SupplyDigital Components

Austria . 6,773 parts In-Stock

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TANS Electronics

Latvia . 1,863 parts In-Stock

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Corphita

USA . 1,782 parts In-Stock

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UHIMA Technologies

Türkiye . 904 parts In-Stock

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Corohmni

South Africa . 231 parts In-Stock

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Overview

Unlock the potential of your electronic designs with the MC10H424FNR2G voltage level translator from Onsemi. Known for their high-quality products, Onsemi delivers reliable solutions that meet the demands of today's technology. This versatile chip carrier features four functions and a wide operating temperature range, making it ideal for a variety of applications. With fast response times and precise output characteristics, this TTL to ECL translator offers unparalleled performance. Upgrade your projects with the MC10H424FNR2G and experience the benefits of superior design and innovation in every application.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and reliability for long-term use.

Surface Mount: YES

Surface mount capability allows for easy installation onto circuit boards.

Maximum Supply Voltage: 5.25 V

Can handle high supply voltages, making it versatile for various applications.

No. of Functions: 4

Having multiple functions in one device saves space and reduces component count in a circuit.

Package Shape: SQUARE

Square shape allows for efficient use of board space.

Power Supplies (V): 5,-5.2

Supports both positive and negative power supplies for flexible integration.

No. of Terminals: 20

Multiple terminals provide various connection options and flexibility in circuit design.

Package Style (Meter): CHIP CARRIER

Chip carrier style is compact and ideal for high-density applications.

Minimum Supply Voltage: 4.75 V

Can operate even at lower supply voltages, ensuring compatibility with different systems.

Maximum Operating Temperature: 75 °C

Capable of operating at high temperatures, suitable for demanding environments.

Output Characteristics: OPEN-EMITTER

Open-emitter output allows for easy interfacing with other components.

Minimum Operating Temperature: 0 °C

Can withstand low temperatures, making it suitable for a wide range of operating conditions.

Technical Specifications

Voltage Level Translators MC10H424FNR2G attributes and parameters. Explore more Voltage Level Translators devices from Onsemi

Specs

Maximum Delay:

2.3 ns

Interface IC Type:

JESD-30 Code:

S-PQCC-J20

JESD-609 Code:

e3

Length:

8.965 mm

Moisture Sensitivity Level (MSL):

3

Nominal Negative Supply Voltage:

-5.2 V

No. of Bits:

1

No. of Functions:

4

No. of Terminals:

20

Maximum Operating Temperature:

75 Cel

Minimum Operating Temperature:

0 Cel

Output Characteristics:

OPEN-EMITTER

Output Latch/Register:

NONE

Output Polarity:

COMPLEMENTARY

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC20,.4SQ

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Power Supplies (V):

5,-5.2

Qualification:

Not Qualified

Maximum Seated Height:

4.57 mm

Sub-Category:

Level Translators

Maximum Supply Voltage:

5.25 V

Minimum Supply Voltage:

4.75 V

Nominal Supply Voltage:

5 V

Surface Mount:

YES

Technology:

ECL

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Width:

8.965 mm

Trade Compliance

MC10H424FNR2G Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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