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MC10EP446MNR4G

Onsemi

MC10EP446MNR4G by Onsemi

MC10EP446MNR4G by Onsemi is an 8-bit digital shift register with a propagation delay of 1.025 ns, operating b/w -40 to 85 °C. It features ECL technology, operates at a max frequency of 3200 MHz, and is ideal for industrial applications requiring high-speed data processing in a compact chip carrier package.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 3,294 parts In-Stock

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Digiode

USA . 1,499 parts In-Stock

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1,499

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Distributors (Availability)

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AZTECH Wire

Italy . 605 parts In-Stock

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$10.770

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605

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Problanco Electronics

Mexico . 5,132 parts In-Stock

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TANS Electronics

Latvia . 4,623 parts In-Stock

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SupplyDigital Components

Austria . 3,134 parts In-Stock

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Corphita

USA . 1,362 parts In-Stock

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Kulean Microsystems

USA . 1,167 parts In-Stock

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UHIMA Technologies

Türkiye . 562 parts In-Stock

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Corohmni

South Africa . 482 parts In-Stock

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Microchip USA

USA . 270 parts In-Stock

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Overview

Unleash the power of advanced digital shift registers with the MC10EP446MNR4G by Onsemi. Crafted with precision and expertise, this product offers unparalleled performance and reliability for a wide range of applications. With its cutting-edge technology and industrial-grade design, customers can expect seamless operation and enhanced efficiency in their projects. Say goodbye to limitations and embrace the future of digital shift registers with the MC10EP446MNR4G by Onsemi - where quality meets innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and can withstand various environmental conditions, making the product reliable for long-term use.

Surface Mount: YES

Surface mount technology allows for easy and efficient installation on circuit boards, saving space and reducing assembly time.

Package Shape: SQUARE

The square shape ensures a compact design, making it suitable for applications where space is limited.

No. of Bits: 8

Provides efficient data storage and processing capabilities for various applications.

Nominal Supply Voltage / Vsup (V): 3.3

Operates at a stable voltage level, ensuring reliable performance.

No. of Terminals: 32

Sufficient terminals for connecting to external components and interfacing with other devices.

Propagation Delay (tpd): 1.025 ns

Low propagation delay enables high-speed data transfer and processing.

Maximum Operating Temperature: 85 °C

Can operate in a wide range of temperatures, suitable for industrial applications.

Trigger Type: NEGATIVE EDGE

Allows for precise data capture and synchronization with external signals.

Minimum Operating Temperature: -40 °C

Can withstand extreme cold temperatures, making it suitable for harsh environments.

Terminal Finish: TIN

Tin terminal finish provides good solderability and corrosion resistance.

Terminal Position: QUAD

Quad terminal position allows for easy connection and placement on the circuit board.

Maximum Seated Height: 1 mm

Low profile design saves space and allows for compact system integration.

Width: 5 mm

Narrow width makes it suitable for applications where space is limited.

Output Polarity: COMPLEMENTARY

Complementary outputs provide flexibility in signal processing and logic operations.

Minimum Supply Voltage (Vsup): 3 V

Can operate at low voltage levels, saving power and energy.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperatures for a sufficient duration during manufacturing processes.

Peak Reflow Temperature °C: 260

Can withstand high reflow temperatures during soldering processes.

Length: 5 mm

Compact length for space-efficient design and integration.

Temperature Grade: INDUSTRIAL

Designed to operate reliably in industrial temperature ranges.

Technology: ECL

ECL technology offers high-speed and low-power operation for efficient data processing.

Terminal Form: NO LEAD

Lead-free terminal form complies with environmental regulations and enhances reliability.

Terminal Pitch: 0.5 mm

Narrow terminal pitch allows for high-density circuit designs and efficient PCB layout.

Count Direction: RIGHT

Right count direction for convenient data processing and compatibility with existing systems.

Minimum fmax: 3200 MHz

High maximum frequency for rapid data processing and high-performance applications.

Maximum Supply Voltage (Vsup): 5.5 V

Can withstand higher voltage levels, providing flexibility in power supply options.

Technical Specifications

Digital Shift Registers MC10EP446MNR4G attributes and parameters. Explore more Digital Shift Registers devices from Onsemi

Specs

Additional Features:

ECL MODE: VCC = 0V WITH VEE = -3V TO -5.5V

Count Direction:

RIGHT

Family:

10E

JESD-30 Code:

S-PQCC-N32

JESD-609 Code:

e3

Length:

5 mm

Logic IC Type:

Moisture Sensitivity Level (MSL):

1

No. of Bits:

8

No. of Functions:

1

No. of Terminals:

32

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Polarity:

COMPLEMENTARY

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

CHIP CARRIER, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Propagation Delay (tpd):

1.025 ns

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

ECL

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Trigger Type:

NEGATIVE EDGE

Width:

5 mm

Minimum fmax:

3200 MHz

Trade Compliance

MC10EP446MNR4G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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