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MC10EP35DR2

Onsemi

MC10EP35DR2 by Onsemi

MC10EP35DR2 by Onsemi is a dual-bit ECL flip-flop with 0.49 ns propagation delay and 3.3V nominal voltage. Ideal for high-speed applications, it operates b/w -40 to 85 °C, has a max frequency of 3GHz, and comes in a small outline package for surface mount assembly.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 9,648 parts In-Stock

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Digiode

USA . 585 parts In-Stock

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585

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Distributors (Availability)

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AZTECH Wire

Italy . 1,096 parts In-Stock

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$9.280

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1,096

$9.280

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Kepictronics

USA . 12,000 parts In-Stock

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Microchip USA

USA . 3,917 parts In-Stock

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TANS Electronics

Latvia . 3,708 parts In-Stock

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SupplyDigital Components

Austria . 3,625 parts In-Stock

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Kulean Microsystems

USA . 3,483 parts In-Stock

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Problanco Electronics

Mexico . 1,756 parts In-Stock

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Corphita

USA . 1,682 parts In-Stock

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UHIMA Technologies

Türkiye . 909 parts In-Stock

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909

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Corohmni

South Africa . 256 parts In-Stock

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Overview

Unlock the power of seamless data transmission and precision timing with the MC10EP35DR2 by Onsemi. Crafted with industry-leading expertise and cutting-edge technology, this latches & flip-flops category gem offers unrivaled reliability and performance for your electronic projects. From advanced industrial applications to high-speed communications, this product is designed to elevate your work to new heights. Experience the value and benefits of top-tier quality with the MC10EP35DR2 - where innovation meets excellence.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Propagation Delay At Nominal Supply: 0.575 ns

Fast propagation delay ensures quick response times, making this latch and flip-flop suitable for high-speed applications.

Surface Mount: YES

Allows for easy installation on circuit boards, saving time and effort during assembly.

Trigger Type: POSITIVE EDGE

Positive edge triggering ensures reliable and accurate operation when the input signal transitions from low to high, making it suitable for specific applications.

Technology: ECL

Emitter-Coupled Logic technology offers high-speed operation and low power consumption, making this latch and flip-flop energy-efficient and reliable.

Maximum Frequency At Nominal Supply: 3000000000 Hz

Capable of operating at high frequencies, making it ideal for applications that require rapid data processing and signal handling.

Technical Specifications

Latches & Flip-Flops MC10EP35DR2 attributes and parameters. Explore more Latches & Flip-Flops devices from Onsemi

Specs

Additional Features:

NECL MODE: VCC = 0V WITH VEE = -3V TO -5.5V

Family:

10E

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e0

Length:

4.9 mm

Logic IC Type:

Maximum Frequency At Nominal Supply:

3000000000 Hz

Moisture Sensitivity Level (MSL):

1

No. of Bits:

2

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Polarity:

COMPLEMENTARY

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Packing Method:

TR

Peak Reflow Temperature (C):

235

Power Supplies (V):

-5.2

Maximum Power Supply Current (ICC):

50 mA

Propagation Delay At Nominal Supply:

.575 ns

Propagation Delay (tpd):

.49 ns

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Sub-Category:

FF/Latches

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

ECL

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Trigger Type:

POSITIVE EDGE

Width:

3.9 mm

Trade Compliance

MC10EP35DR2 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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