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MC100H603FNR2G

Onsemi

MC100H603FNR2G by Onsemi

MC100H603FNR2G by Onsemi is a voltage level translator with 9 functions, operating at 4.5-5.5V. It features ECL technology, 12ns max delay, and ECL to TTL translation capability. Ideal for applications requiring precise signal conversion in compact spaces.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,981 parts In-Stock

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Digiode

USA . 343 parts In-Stock

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343

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Distributors (Availability)

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Problanco Electronics

Mexico . 7,919 parts In-Stock

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7,919

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SupplyDigital Components

Austria . 7,652 parts In-Stock

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Microchip USA

USA . 5,514 parts In-Stock

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5,514

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Kulean Microsystems

USA . 3,291 parts In-Stock

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TANS Electronics

Latvia . 1,270 parts In-Stock

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1,270

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UHIMA Technologies

Türkiye . 750 parts In-Stock

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750

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Corohmni

South Africa . 288 parts In-Stock

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Corphita

USA . 111 parts In-Stock

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Overview

Experience seamless voltage level translation with the MC100H603FNR2G by Onsemi. As a leading manufacturer in the industry, Onsemi guarantees top-notch quality and reliability. This voltage level translator is perfect for a wide range of applications, offering smooth and efficient signal transitioning. With its 3-STATE output characteristics and complementary polarity, this product ensures high performance and accuracy. Upgrade your electronic designs today with the MC100H603FNR2G and discover the value and benefits it brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package lightweight and durable, ensuring easy handling and long-term reliability.

Surface Mount: YES

Being surface mountable allows for easy integration onto circuit boards, saving space and simplifying the manufacturing process.

Maximum Supply Voltage: 5.5 V

Support for a maximum supply voltage of 5.5 V ensures compatibility with a wide range of systems and applications.

No. of Functions: 9

Having 9 functions in one device provides versatility and flexibility in signal translation and voltage level shifting.

Package Shape: SQUARE

The square shape of the package allows for efficient use of space on a circuit board, enabling compact designs.

Power Supplies (V): 5,-4.5

Support for both 5V and -4.5V power supplies enables compatibility with a variety of mixed voltage systems.

No. of Terminals: 28

Having 28 terminals provides ample connection points for interfacing with other components and devices in a circuit.

Package Style (Meter): CHIP CARRIER

The chip carrier package style offers a compact form factor and excellent thermal performance, ideal for high-density applications.

Minimum Supply Voltage: 4.5 V

Support for a minimum supply voltage of 4.5 V ensures reliable operation even in lower voltage scenarios.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature of 85 °C allows for reliable performance in a wide range of environmental conditions.

Output Characteristics: 3-STATE

The 3-state output allows for tri-state logic operation, offering flexibility in managing bus contention and reducing power consumption.

Minimum Operating Temperature: 0 °C

The minimum operating temperature of 0 °C ensures proper functioning even in cold environments.

Terminal Finish: TIN

The use of tin as the terminal finish provides corrosion resistance and solderability for reliable connections.

Terminal Position: QUAD

The quad terminal position facilitates easy mounting and soldering onto a circuit board, ensuring secure and reliable connections.

Maximum Seated Height: 4.57 mm

The maximum seated height of 4.57 mm allows for a low-profile design, suitable for space-constrained applications.

Width: 11.505 mm

The width of 11.505 mm offers a compact footprint, enabling efficient use of space on a circuit board.

Output Polarity: COMPLEMENTARY

Complementary output polarity ensures signal integrity and compatibility with other digital logic circuits.

Peak Reflow Temperature °C: 260

The high peak reflow temperature of 260 °C supports reliable soldering during assembly processes.

Length: 11.505 mm

The length of 11.505 mm provides a balanced form factor, suitable for various device placements and integration scenarios.

Technology: ECL

Employing ECL technology enables high-speed signal processing and low-jitter performance, critical for demanding applications.

Terminal Form: J BEND

The J bend terminal form facilitates easy insertion and removal during assembly, simplifying the manufacturing process.

Output Latch/Register: LATCH

The latching output feature retains the output state until updated, providing stability in signal transmission and reception.

Nominal Supply Voltage: 5 V

The nominal 5V supply voltage ensures compatibility with standard logic levels, simplifying integration with existing systems.

Nominal Negative Supply Voltage: -4.5 V

Support for a nominal -4.5V negative supply voltage allows for bidirectional signal translation and level shifting capabilities.

Maximum Delay: 12 ns

With a maximum delay of 12 ns, this product offers fast signal processing and minimal latency in data transmission.

Terminal Pitch: 1.27 mm

The terminal pitch of 1.27 mm provides ample spacing for easy soldering and connections, ensuring reliable electrical contact.

Interface IC Type: ECL TO TTL TRANSLATOR

As an ECL to TTL translator, this product enables seamless communication between devices operating at different voltage levels, enhancing system interoperability.

Technical Specifications

Voltage Level Translators MC100H603FNR2G attributes and parameters. Explore more Voltage Level Translators devices from Onsemi

Specs

Maximum Delay:

12 ns

Interface IC Type:

JESD-30 Code:

S-PQCC-J28

JESD-609 Code:

e3

Length:

11.505 mm

Nominal Negative Supply Voltage:

-4.5 V

No. of Bits:

1

No. of Functions:

9

No. of Terminals:

28

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

0 Cel

Output Characteristics:

3-STATE

Output Latch/Register:

LATCH

Output Polarity:

COMPLEMENTARY

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC28,.5SQ

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Power Supplies (V):

5,-4.5

Qualification:

Not Qualified

Maximum Seated Height:

4.57 mm

Sub-Category:

Level Translators

Maximum Supply Voltage:

5.5 V

Minimum Supply Voltage:

4.5 V

Nominal Supply Voltage:

5 V

Surface Mount:

YES

Technology:

ECL

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Width:

11.505 mm

Trade Compliance

MC100H603FNR2G Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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