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JM38510/06302BEA

Onsemi

JM38510/06302BEA by Onsemi

JM38510/06302BEA by Onsemi is a MILITARY-grade ECL TO TTL TRANSLATOR with 4-bit functions. It operates b/w -55 to 125 °C, with TRUE output polarity and TOTEM-POLE characteristics. Ideal for voltage level translation in demanding environments due to its CERAMIC, METAL-SEALED COFIRED package.

Median Price

$22.838

Lifecycle Status

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Freelance Electronics

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Mentor Electronics Marketing, LLC

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Ampacity Inc.

Singapore . 399 parts In-Stock

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Corohmni

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One Stop Electronics

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Overview

Unleash the power of seamless voltage translation with the JM38510/06302BEA by Onsemi. Crafted with precision and reliability in mind, this voltage level translator boasts a MILITARY-grade screening level and a robust package body material for unparalleled durability. Perfect for a wide range of applications, this versatile device offers customers the value of smooth signal conversion and enhanced performance. Elevate your projects with the quality and innovation that only Onsemi can deliver.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This package body material ensures durability and reliability in various operating conditions.

No. of Functions: 4

Having 4 functions allows for versatile voltage translation capabilities in different applications.

Screening Level: MIL-M-38510 Class B

Meeting MIL-M-38510 Class B standards ensures high quality and reliability for military applications.

Package Shape: RECTANGULAR

The rectangular package shape enables easy integration into circuit designs.

No. of Bits: 4

Operating with 4 bits provides sufficient data processing capacity for voltage level translation tasks.

No. of Terminals: 16

With 16 terminals, this product offers flexibility in connecting to other components in a circuit.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature allows for reliable performance in demanding environments.

Output Characteristics: TOTEM-POLE

The totem-pole output characteristics ensure strong and reliable signal transmission.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature enables this product to function in extreme cold conditions.

Terminal Position: DUAL

The dual terminal position offers flexibility in connection options for efficient circuit design.

Output Polarity: TRUE

The true output polarity ensures accurate voltage level translation without signal distortion.

Temperature Grade: MILITARY

Designed to meet military-grade temperature requirements, ensuring performance in harsh environments.

Terminal Form: THROUGH-HOLE

The through-hole terminal form allows for secure and reliable solder connections in circuit assembly.

Nominal Supply Voltage: 5 V

Operating at a nominal supply voltage of 5V, this product is compatible with standard voltage levels.

Nominal Negative Supply Voltage: -5.2 V

The nominal negative supply voltage of -5.2V allows for bidirectional voltage translation capabilities.

Interface IC Type: ECL TO TTL TRANSLATOR

Being an ECL to TTL translator interface IC type, this product facilitates seamless communication between different logic levels.

Technical Specifications

Voltage Level Translators JM38510/06302BEA attributes and parameters. Explore more Voltage Level Translators devices from Onsemi

Specs

Interface IC Type:

JESD-30 Code:

R-CDIP-T16

Nominal Negative Supply Voltage:

-5.2 V

No. of Bits:

4

No. of Functions:

4

No. of Terminals:

16

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

TOTEM-POLE

Output Latch/Register:

NONE

Output Polarity:

TRUE

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

DIP

Package Shape:

Package Style (Meter):

IN-LINE

Qualification:

Not Qualified

Screening Level:

MIL-M-38510 Class B

Nominal Supply Voltage:

5 V

Surface Mount:

NO

Temperature Grade:

Terminal Form:

Terminal Position:

DUAL

Trade Compliance

JM38510/06302BEA Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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