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MC100EP446FAR2

Onsemi

MC100EP446FAR2 by Onsemi

MC100EP446FAR2 by Onsemi is an 8-bit digital shift register with a propagation delay of 1.025 ns, operating at a supply voltage of 3.3V. It features negative edge triggering and operates in industrial temperature range. Ideal for high-speed applications requiring ECL technology with a max frequency of 3200 MHz.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 5,914 parts In-Stock

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Digiode

USA . 828 parts In-Stock

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AZTECH Wire

Italy . 484 parts In-Stock

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$16.960

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484

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Component Stockers USA

USA . 420 parts In-Stock

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$99.990

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Kulean Microsystems

USA . 7,186 parts In-Stock

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SupplyDigital Components

Austria . 4,373 parts In-Stock

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TANS Electronics

Latvia . 4,215 parts In-Stock

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Problanco Electronics

Mexico . 971 parts In-Stock

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UHIMA Technologies

Türkiye . 884 parts In-Stock

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Corphita

USA . 876 parts In-Stock

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Microchip USA

USA . 352 parts In-Stock

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Corohmni

South Africa . 288 parts In-Stock

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Overview

Unlock the power of reliable data transfer and precise digital signal processing with the MC100EP446FAR2 by Onsemi. Crafted with precision and expertise, this digital shift register offers seamless performance in a variety of applications. With a focus on quality and innovation, Onsemi ensures that each product is designed to exceed expectations. Experience the value and benefits of this product, providing customers with efficient and effective solutions for their digital processing needs. Choose Onsemi for unparalleled quality and performance in the world of digital shift registers.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for portable or rugged applications.

Surface Mount: YES

Surface mount capability simplifies the assembly process and allows for compact PCB designs.

No. of Bits: 8

Provides sufficient parallel data storage capacity for various applications.

Nominal Supply Voltage / Vsup (V): 3.3

Operates efficiently at a common supply voltage, suitable for many electronic systems.

Maximum Operating Temperature: 85 °C

Ability to operate at high temperatures increases the product's versatility in diverse environments.

Trigger Type: NEGATIVE EDGE

Negative edge triggering ensures precise data capture and synchronization in digital systems.

Technology: ECL

ECL technology offers high-speed operation and low power consumption, making the product suitable for demanding applications.

Technical Specifications

Digital Shift Registers MC100EP446FAR2 attributes and parameters. Explore more Digital Shift Registers devices from Onsemi

Specs

Additional Features:

ECL MODE: VCC = 0V WITH VEE = -3V TO -5.5V

Count Direction:

RIGHT

Family:

100E

JESD-30 Code:

S-PQFP-G32

JESD-609 Code:

e0

Length:

7 mm

Logic IC Type:

Moisture Sensitivity Level (MSL):

2

No. of Bits:

8

No. of Functions:

1

No. of Terminals:

32

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Polarity:

COMPLEMENTARY

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

FLATPACK, LOW PROFILE

Peak Reflow Temperature (C):

235

Propagation Delay (tpd):

1.025 ns

Qualification:

Not Qualified

Maximum Seated Height:

1.6 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

ECL

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

QUAD

Trigger Type:

NEGATIVE EDGE

Width:

7 mm

Minimum fmax:

3200 MHz

Trade Compliance

MC100EP446FAR2 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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