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MBRD835LT4

Onsemi

MBRD835LT4 by Onsemi

MBRD835LT4 by Onsemi is a Schottky rectifier diode with a max output current of 8A and max repetitive peak reverse voltage of 35V. It operates in temperatures ranging from -65°C to 150°C, making it suitable for power applications. This single-configured diode comes in a small outline package ideal for surface mount assembly.

Median Price

$0.062

Lifecycle Status

Suppliers In-Stock

37

In-Stock Inventory

1k+

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Adafruit Industries

USA . 100 parts In-Stock

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Digiode

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DF Sales Co.

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Component Electronics Inc.

Canada . 49 parts In-Stock

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Ampacity Inc.

Singapore . 100 parts In-Stock

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Semicontronic

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Corphita

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Advanced Electronics

New Zealand . 100 parts In-Stock

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Aztec Data Supply Inc.

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Corohmni

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AZTECH Wire

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SupplyDigital Components

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Continental Prestige Electronics

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Kulean Microsystems

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Glotronic Ltd.

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Component Stockers USA

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UHIMA Technologies

Türkiye . 678 parts In-Stock

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Bastille Electronics

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Overview

Unleash the power of your electronics with the MBRD835LT4 by Onsemi! Manufactured with top-quality materials and cutting-edge technology, this Schottky rectifier diode is designed for high-performance power applications. With a maximum output current of 8A and a peak repetitive peak reverse voltage of 35V, this diode offers unmatched reliability and efficiency. Whether you're working on consumer electronics or industrial equipment, the MBRD835LT4 is the perfect choice for all your power needs. Upgrade your devices today and experience the difference that Onsemi's expertise can make!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection to the diode, ensuring a longer lifespan.

Surface Mount: YES

Allows for easy and convenient installation on circuit boards.

Application: POWER

Suitable for power applications, providing efficient performance.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it ideal for various operating conditions.

Diode Type: RECTIFIER DIODE

Efficiently converts alternating current (AC) to direct current (DC), making it essential for power supplies.

Maximum Output Current: 8 A

Capable of handling high currents, suitable for powering various electronic devices.

Technology: SCHOTTKY

Provides low forward voltage drop and fast switching, enhancing efficiency in power applications.

Maximum Repetitive Peak Reverse Voltage: 35 V

Provides protection against reverse currents up to 35 volts, safeguarding the circuit.

Diode Element Material: SILICON

Known for its reliability and durability, ensuring stable performance over time.

Technical Specifications

Diodes & Rectifiers MBRD835LT4 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

POWER

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.51 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

75 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

8 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

35 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MBRD835LT4 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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