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MBRD340T4G

Onsemi

MBRD340T4G by Onsemi

MBRD340T4G by Onsemi is a Schottky rectifier diode with a max output current of 3A and a max repetitive peak reverse voltage of 40V. It is designed for power applications, featuring a small outline package style and matte tin terminal finish. Operating temperatures range from -65°C to 175°C, making it suitable for various electronic devices.

Median Price

$0.294

Lifecycle Status

Suppliers In-Stock

31

In-Stock Inventory

1k+

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Adafruit Industries

USA . 350 parts In-Stock

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$0.026

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350

$0.026

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Rochester

USA . 32,200 parts In-Stock

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$0.340

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$0.330

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$0.330

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$0.340

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Mouser Electronics

USA . 7,481 parts In-Stock

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$1.340

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$0.553

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DigiKey

USA . 1,988 parts In-Stock

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$0.552

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$0.390

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Arrow

USA . 145,000 parts In-Stock

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Verical

USA . 145,000 parts In-Stock

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Chip1Stop

Japan . 52,500 parts In-Stock

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Future Electronics

Canada . 45,000 parts In-Stock

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Farnell

UK . 2,500 parts In-Stock

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Newark

USA . 2,500 parts In-Stock

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Element14

Singapore . 2,500 parts In-Stock

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EBV Elektronik

Germany . 2,500 parts In-Stock

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Digiode

USA . 1,804 parts In-Stock

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Nova Conductors

Japan . 750 parts In-Stock

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TME

Poland . 1,959 parts In-Stock

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$0.487

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$0.384

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IBS Electronics

USA . 92,500 parts In-Stock

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Vyrian

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Component Sense

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Flip Electronics

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Chip Stock

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NAC Semi

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Quantum Digital Technology

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Bristol Electronics

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Sensible Micro Corp

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Cyclops Electronics Ltd

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Contempo Components LLC

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PC Components Company LLC

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NexGen Digital

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Semicontronic

India . 21,278 parts In-Stock

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Corphita

USA . 975 parts In-Stock

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Advanced Electronics

New Zealand . 350 parts In-Stock

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Corohmni

South Africa . 150 parts In-Stock

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Ampacity Inc.

Singapore . 21,800 parts In-Stock

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Aztec Data Supply Inc.

USA . 733 parts In-Stock

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Continental Prestige Electronics

USA . 4,526 parts In-Stock

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Argo Parts USA

USA . 642 parts In-Stock

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$0.339

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Netroflash

USA . 1,000 parts In-Stock

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$0.384

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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RC Electronics

USA . 89,873 parts In-Stock

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Kepictronics

USA . 63,500 parts In-Stock

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Perfect Parts

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Authorized Procurement Solutions

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CPlus Electronics

USA . 11,800 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Problanco Electronics

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Kulean Microsystems

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SupplyDigital Components

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TANS Electronics

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A-Z Elektronik GmbH

Germany . 4,506 parts In-Stock

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S.R.D Solutions

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Lixinc

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UHIMA Technologies

Türkiye . 548 parts In-Stock

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Futuretech Components

Singapore . 356 parts In-Stock

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iodParts Technologies Inc.

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Component Stockers USA

USA . 141 parts In-Stock

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Overview

Discover the power of the MBRD340T4G by Onsemi, a high-quality Schottky rectifier diode designed for power applications. With its small outline package style and single terminal position, this diode offers unmatched reliability and performance. Whether you're looking to improve efficiency in your power supply or enhance circuit protection, the MBRD340T4G is the perfect solution. Trust in Onsemi's reputation for excellence and unlock the full potential of your electronic systems with this cutting-edge diode.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this diode lightweight and durable, perfect for various applications.

Config: SINGLE

The single configuration simplifies the wiring process and makes installation easier.

Surface Mount: YES

The surface mount feature allows for easy and secure placement on PCBs, saving space and reducing assembly time.

Package Shape: RECTANGULAR

The rectangular shape offers a compact design, ideal for applications where space is limited.

No. of Terminals: 2

With only 2 terminals, this diode is easy to connect and integrate into circuits.

Package Style (Meter): SMALL OUTLINE

The small outline package style is sleek and modern, suitable for a wide range of industrial and electronic devices.

Application: POWER

Designed specifically for power applications, this diode can handle high voltage and current requirements with ease.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature, this diode can withstand harsh environmental conditions.

Minimum Operating Temperature: -65 °C

The low minimum operating temperature ensures reliable performance even in extreme cold environments.

Terminal Finish: MATTE TIN

The matte tin finish provides excellent solderability and corrosion resistance, ensuring a reliable electrical connection.

Terminal Position: SINGLE

The single terminal position simplifies installation and reduces the risk of wiring errors.

Case Connection: CATHODE

The cathode case connection design simplifies circuit design and ensures proper polarity.

Maximum Time At Peak Reflow Temperature: 30s

The short maximum time at peak reflow temperature reduces the risk of damage during soldering.

Peak Reflow Temperature: 260 °C

The high peak reflow temperature allows for reliable soldering and ensures a secure connection.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product is perfect for converting AC to DC current with low forward voltage drop.

Maximum Forward Voltage (VF): 0.6 V

The low maximum forward voltage minimizes power loss and heat generation, making this diode energy efficient.

Maximum Output Current: 3 A

With a high maximum output current, this diode can handle heavy loads and power requirements.

Technology: SCHOTTKY

The Schottky technology offers fast switching speeds and low power loss, making this diode ideal for high-frequency applications.

Terminal Form: GULL WING

The gull wing terminal form provides easy handling and secure mounting on PCBs.

Maximum Repetitive Peak Reverse Voltage: 40 V

With a high maximum repetitive peak reverse voltage, this diode can handle reverse polarity without damage.

Maximum Non Repetitive Peak Forward Current: 75 A

The high maximum non-repetitive peak forward current allows this diode to handle short-duration power surges.

Diode Element Material: SILICON

Made of high-quality silicon, this diode offers excellent performance and reliability for various applications.

Technical Specifications

Diodes & Rectifiers MBRD340T4G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

POWER

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.6 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

75 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

40 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MBRD340T4G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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