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MBRD360T4

Onsemi

MBRD360T4 by Onsemi

MBRD360T4 by Onsemi is a Schottky rectifier diode with a max output current of 3A and forward voltage of 0.6V. It is designed for power applications, featuring a peak reverse voltage of 60V and operating temperature up to 150°C. This single-configured diode comes in a small outline package suitable for surface mount technology.

Median Price

$0.123

Lifecycle Status

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40

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1k+

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Adafruit Industries

USA . 450 parts In-Stock

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Digiode

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

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Aztec Data Supply Inc.

USA . 1,027 parts In-Stock

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Ampacity Inc.

Singapore . 365 parts In-Stock

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Semicontronic

India . 92 parts In-Stock

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Corphita

USA . 561 parts In-Stock

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Corohmni

South Africa . 67 parts In-Stock

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AZTECH Wire

Italy . 1,076 parts In-Stock

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Kulean Microsystems

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UHIMA Technologies

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Bastille Electronics

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Overview

Experience the superior quality and reliability of the MBRD360T4 by Onsemi, a leading manufacturer in the field of diodes & rectifiers. Ideal for power applications, this SCHOTTKY rectifier diode offers a maximum forward voltage of just 0.6V and can handle up to 3A of output current. With a peak repetitive peak reverse voltage of 60V, this small outline package with gull wing terminals provides efficient performance at a maximum operating temperature of 150°C. Trust Onsemi to deliver cutting-edge technology and exceptional value with the MBRD360T4, ensuring you get the benefits and advantages you need for your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material ensures durability and protection for the diode, making it suitable for various applications.

Surface Mount: YES

Being surface mountable allows for easy and convenient installation on circuit boards, saving space and enabling efficient assembly.

Application: POWER

Designed for power applications, this diode can handle high output currents, making it ideal for use in power supplies and other related circuits.

Technology: SCHOTTKY

The Schottky technology used in this diode results in lower forward voltage drop and faster switching speeds, making it more efficient and suitable for high-frequency applications.

Maximum Repetitive Peak Reverse Voltage: 60 V

With a maximum repetitive peak reverse voltage of 60 V, this diode can be used in circuits where reverse voltage protection is required without the risk of damage.

Technical Specifications

Diodes & Rectifiers MBRD360T4 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

POWER

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.6 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

75 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

60 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MBRD360T4 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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