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MBRD835LG

Onsemi

MBRD835LG by Onsemi

MBRD835LG by Onsemi is a Schottky rectifier diode with a max output current of 8A and a max repetitive peak reverse voltage of 35V. It is designed for power applications, featuring a small outline package style and matte tin terminal finish. With an operating temperature range from -65°C to 150°C, it is suitable for various electronic devices requiring efficient power management.

Median Price

$0.447

Lifecycle Status

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30

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1k+

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Verical

USA . 3,680 parts In-Stock

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$4.722

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Chip1Stop

Japan . 33 parts In-Stock

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Arrow

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Freelance Electronics

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Nova Conductors

Japan . 96 parts In-Stock

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Digiode

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Forefront Electronics and Design

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PC Components Company LLC

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MISTER SPROCKETS

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Advanced Electronics

New Zealand . 350 parts In-Stock

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Aztec Data Supply Inc.

USA . 40 parts In-Stock

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Corohmni

South Africa . 407 parts In-Stock

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Decca Corp

Germany . 2,406 parts In-Stock

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$0.380

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$0.372

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$0.369

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Continental Prestige Electronics

USA . 4,807 parts In-Stock

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$0.579

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$0.567

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Argo Parts USA

USA . 3,014 parts In-Stock

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$0.562

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Ampacity Inc.

Singapore . 2,075 parts In-Stock

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$0.830

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Microchip USA

USA . 242 parts In-Stock

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$5.720

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$5.680

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$5.670

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$5.650

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Corphita

USA . 800 parts In-Stock

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$6.633

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AZTECH Wire

Italy . 760 parts In-Stock

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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Brazil . 32,059 parts In-Stock

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Lucentia Tech

USA . 32,059 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Problanco Electronics

Mexico . 1,885 parts In-Stock

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Modulus Dynamics

Lithuania . 500 parts In-Stock

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UHIMA Technologies

Türkiye . 436 parts In-Stock

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GreenTree Electronics

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Cyclops Electronics Ltd (Excess)

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iodParts Technologies Inc.

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Overview

Experience the power of superior quality and reliability with the MBRD835LG diode rectifier from Onsemi. Crafted with precision and expertise, this high-performance component offers unparalleled efficiency and durability for a wide range of power applications. With its cutting-edge technology and innovative design, the MBRD835LG provides customers with unmatched value and benefits, making it the ideal choice for your power needs. Trust Onsemi to deliver excellence in every component, experience the difference with the MBRD835LG.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, ensuring longevity and reliability.

Config: SINGLE

Simplified design with only one diode, making it easy to implement and maintain.

Surface Mount: YES

Allows for easy and efficient mounting on circuit boards, saving space and simplifying assembly.

Package Shape: RECTANGULAR

Optimal shape for compact placement on circuit boards, maximizing efficiency and space usage.

No. of Terminals: 2

Simple and straightforward connection with only two terminals, reducing complexity in installation.

Package Style (Meter): SMALL OUTLINE

Compact design suitable for various applications, contributing to overall space-saving in designs.

Application: POWER

Designed specifically for power applications, ensuring efficient performance and reliability.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for a wide range of operating conditions.

Minimum Operating Temperature: -65 °C

Operates effectively even in low temperatures, ensuring reliability in diverse environments.

Terminal Finish: Matte Tin (Sn) - annealed

Durable terminal finish that enhances conductivity and longevity, ensuring stable performance.

Terminal Position: SINGLE

Simplified terminal configuration for easy installation and maintenance.

Case Connection: CATHODE

Specific case connection for better control and efficiency in power applications.

Maximum Time At Peak Reflow Temperature (s): 40

Can withstand peak reflow temperatures for a specified duration, ensuring reliable performance during manufacturing processes.

Peak Reflow Temperature °C: 260

Capable of withstanding high reflow temperatures during assembly, ensuring proper soldering and connection reliability.

Diode Type: RECTIFIER DIODE

Rectifier diode configuration for efficient conversion of AC to DC power, ideal for power applications.

Maximum Forward Voltage (VF): 0.51 V

Low forward voltage drop for efficient power conversion and minimal energy loss.

Maximum Output Current: 8 A

High output current capacity for powering various devices and equipment.

Technology: SCHOTTKY

Schottky technology for fast switching and low voltage drop, improving efficiency and performance.

Terminal Form: GULL WING

Gull wing terminal form for reliable connection and easy PCB mounting.

Maximum Repetitive Peak Reverse Voltage: 35 V

Can handle high reverse voltages for protection and efficient power management.

Maximum Non Repetitive Peak Forward Current: 75 A

Capable of handling high forward currents for surge protection and reliable power delivery.

Diode Element Material: SILICON

Silicon diode element material for reliable performance and durability in power applications.

Technical Specifications

Diodes & Rectifiers MBRD835LG attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

POWER

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.51 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

75 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

8 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

35 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

40

Trade Compliance

MBRD835LG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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