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MBRD660CTG

Onsemi

MBRD660CTG by Onsemi

MBRD660CTG by Onsemi is a Schottky rectifier diode with 2 elements, featuring a common cathode configuration and max output current of 3A. It operates b/w -65 to 175°C, with a reverse test voltage of 60V. Ideal for power applications due to its low forward voltage of 0.9V and high breakdown voltage.

Median Price

$0.453

Lifecycle Status

Suppliers In-Stock

20

In-Stock Inventory

1k+

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Adafruit Industries

USA . 72 parts In-Stock

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$0.054

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$0.049

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$0.044

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72

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Avnet

USA . 3,627 parts In-Stock

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$0.278

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$0.250

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$0.238

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$0.278

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Future Electronics

Canada . 1,400 parts In-Stock

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$0.575

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$0.550

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$0.510

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$0.470

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$0.575

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$0.470

Newark

USA . 516 parts In-Stock

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$0.807

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$0.437

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$0.330

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$0.258

516

$0.807

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Arrow

USA . 5,025 parts In-Stock

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Digiode

USA . 789 parts In-Stock

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Nova Conductors

Japan . 600 parts In-Stock

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Chip Stock

USA . 13,900 parts In-Stock

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Vyrian

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ACDS - Activité Composants Distribution Service

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Speed Components Ltd

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LIBRA Elektronik GmbH

Germany . 73 parts In-Stock

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ComSIT Distribution GmbH

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ComSIT USA

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A&K Electronics

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North Shore Components

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Avant Electronics Limited

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Distributors (Availability)

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Semicontronic

India . 1,917 parts In-Stock

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$0.046

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$0.045

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$0.045

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1,917

$0.046

$0.045

$0.045

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Ampacity Inc.

Singapore . 1,746 parts In-Stock

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$0.046

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Corphita

USA . 98 parts In-Stock

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$0.049

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Corohmni

South Africa . 311 parts In-Stock

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Argo Parts USA

USA . 7,981 parts In-Stock

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$0.567

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$0.550

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Continental Prestige Electronics

USA . 4,325 parts In-Stock

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$0.567

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$0.556

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Netroflash

USA . 2,000 parts In-Stock

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Perfect Parts

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RC Electronics

USA . 76,107 parts In-Stock

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Lixinc

USA . 13,384 parts In-Stock

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Kepictronics

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Authorized Procurement Solutions

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TANS Electronics

Latvia . 5,197 parts In-Stock

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Problanco Electronics

Mexico . 4,781 parts In-Stock

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Microchip USA

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Kulean Microsystems

USA . 3,271 parts In-Stock

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UHIMA Technologies

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SupplyDigital Components

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GreenTree Electronics

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Cyclops Electronics Ltd (Excess)

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Glotronic Ltd.

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Overview

Experience unparalleled performance and reliability with the Onsemi MBRD660CTG diode rectifier. Manufactured by a trusted industry leader, this common cathode dual element diode is perfect for power applications. With a maximum output current of 3A and a low forward voltage of just 0.9V, this Schottky technology diode offers outstanding efficiency and performance. Trust Onsemi to deliver high-quality components that exceed your expectations every time. Elevate your projects with the MBRD660CTG diode rectifier today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material, providing good protection for the diodes.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration makes it suitable for various circuit designs, and having 2 elements increases functionality.

Maximum Reverse Current: 100 uA

Low reverse current ensures efficient performance and reduces power loss.

Maximum Operating Temperature: 175 °C

Can handle high operating temperatures, suitable for demanding applications.

Technology: SCHOTTKY

Schottky diodes offer fast switching speeds and low forward voltage drop, improving overall efficiency.

Technical Specifications

Diodes & Rectifiers MBRD660CTG attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

POWER

Minimum Breakdown Voltage:

60 V

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.9 V

JEDEC-95 Code:

TO-252AA

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

75 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

60 V

Maximum Reverse Current:

100 uA

Reverse Test Voltage:

60 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MBRD660CTG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

NSN

5961-01-581-6089, 5961015816089

NIIN

015816089

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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