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MBRD360

Onsemi

MBRD360 by Onsemi

MBRD360 by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.6V and a max output current of 3A. It is designed for power applications, with a max operating temperature of 150°C.

Median Price

$0.098

Lifecycle Status

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26

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1k+

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Adafruit Industries

USA . 270 parts In-Stock

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DigiKey

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Digiode

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Freelance Electronics

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Component Electronics Inc.

Canada . 7 parts In-Stock

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Halfin

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LIBRA Elektronik GmbH

Germany . 147 parts In-Stock

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QIE Inc.

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Extreme Components

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Beltway Electronics Company

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ComSIT Distribution GmbH

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PAR Electronics

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Mil-Aero Solutions, Inc.

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Nova Conductors

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Atlantic Semiconductor

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Semicontronic

India . 6,591 parts In-Stock

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Corphita

USA . 991 parts In-Stock

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Corohmni

South Africa . 484 parts In-Stock

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Advanced Electronics

New Zealand . 270 parts In-Stock

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Aztec Data Supply Inc.

USA . 282 parts In-Stock

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Metaverse IC Inc.

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QUARKTWIN TECHNOLOGY LTD

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SupplyDigital Components

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Argo Parts USA

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Lixinc

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TANS Electronics

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Kulean Microsystems

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Continental Prestige Electronics

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UHIMA Technologies

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Problanco Electronics

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Overview

Discover the MBRD360 by Onsemi, a high-quality diode & rectifier that guarantees exceptional performance and reliability. With its small outline package style and gull wing terminal form, this rectifier diode is perfect for power applications. Offering a maximum forward voltage of 0.6V and a maximum output current of 3A, the MBRD360 delivers optimal efficiency and precision. Manufactured by Onsemi, a trusted leader in the industry, this product ensures superior quality and durability. Experience the value and benefits of the MBRD360, from its easy surface-mount configuration to its robust construction. Upgrade your power applications today with the MBRD360 and elevate your projects to new heights of success.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and ruggedness, making the product durable and reliable.

Config: SINGLE

Single configuration simplifies the circuit design and makes installation easier.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly.

Package Shape: RECTANGULAR

Rectangular shape makes it easy to mount onto PCB and ensures a compact design.

No. of Terminals: 2

Having only 2 terminals simplifies the connection process and reduces the chances of wiring errors.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and is suitable for compact electronic devices.

Application: POWER

Designed for power applications, making it suitable for a wide range of power supply and conversion tasks.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows the diode to function reliably even in demanding conditions.

Terminal Finish: TIN LEAD

Tin lead finish ensures good solderability and corrosion resistance.

Terminal Position: SINGLE

Single terminal position simplifies the installation process and reduces the chances of errors.

Case Connection: CATHODE

Cathode case connection allows for easy identification and proper orientation during installation.

Peak Reflow Temperature °C: 235

High peak reflow temperature ensures proper soldering and reliability during assembly.

Diode Type: RECTIFIER DIODE

Rectifier diode type is suitable for converting AC to DC, making it versatile for various applications.

Maximum Forward Voltage (VF): 0.6 V

Low maximum forward voltage ensures minimal power loss and efficient operation.

Maximum Output Current: 3 A

High maximum output current allows for handling higher power loads without overheating.

Technology: SCHOTTKY

Schottky technology provides low forward voltage drop and fast switching speed, ideal for power efficiency.

Terminal Form: GULL WING

Gull wing terminal form makes it suitable for surface mount applications and ensures secure solder joints.

Maximum Repetitive Peak Reverse Voltage: 60 V

High maximum repetitive peak reverse voltage provides reliable reverse protection.

Maximum Non Repetitive Peak Forward Current: 75 A

High maximum non-repetitive peak forward current allows for handling short-duration peak loads.

Diode Element Material: SILICON

Silicon diode element material provides good electrical performance and reliability.

Technical Specifications

Diodes & Rectifiers MBRD360 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

POWER

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.6 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

75 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

60 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MBRD360 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

NSN

5961-01-520-5109, 5961015205109, 5961-14-455-6672, 5961144556672

NIIN

015205109, 144556672

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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