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MBRD360G

Onsemi

MBRD360G by Onsemi

The Onsemi MBRD360G is a Schottky rectifier diode with a max output current of 3A and a max repetitive peak reverse voltage of 60V. It is designed for power applications, featuring a small outline package style and matte tin terminal finish. Operating temperature ranges from -65°C to 175°C, making it suitable for various electronic devices.

Median Price

$0.429

Lifecycle Status

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14

In-Stock Inventory

1k+

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Adafruit Industries

USA . 298 parts In-Stock

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$0.114

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Arrow

USA . 300 parts In-Stock

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$0.745

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$0.574

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Verical

USA . 294 parts In-Stock

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Digiode

USA . 1,902 parts In-Stock

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Nova Conductors

Japan . 1,070 parts In-Stock

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$0.676

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TEDSS.com

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Vyrian

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Flip Electronics

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LWI Electronics Inc

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Avant Electronics Limited

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Chip Stock

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Flex Direct, LLC

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ComSIT Distribution GmbH

Germany . 100 parts In-Stock

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Bristol Electronics

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Aztec Data Supply Inc.

USA . 128 parts In-Stock

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$0.040

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128

$0.040

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Semicontronic

India . 797 parts In-Stock

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$0.097

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$0.095

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$0.094

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797

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Ampacity Inc.

Singapore . 260 parts In-Stock

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$0.097

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260

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Corphita

USA . 2,302 parts In-Stock

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$0.103

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Corohmni

South Africa . 105 parts In-Stock

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Aranea Global

USA . 1,000 parts In-Stock

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$0.662

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$0.636

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$0.662

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Continental Prestige Electronics

USA . 4,952 parts In-Stock

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$0.675

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$0.662

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Argo Parts USA

USA . 2,574 parts In-Stock

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$0.675

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$0.655

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Bastille Electronics

Australia . 650 parts In-Stock

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$0.676

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$0.642

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$0.610

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$0.602

650

$0.676

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$0.602

AZTECH Wire

Italy . 1,268 parts In-Stock

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Metaverse IC Inc.

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Perfect Parts

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QUARKTWIN TECHNOLOGY LTD

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Robosynatics

Brazil . 7,552 parts In-Stock

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TANS Electronics

Latvia . 6,371 parts In-Stock

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Lixinc

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SupplyDigital Components

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Problanco Electronics

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Authorized Procurement Solutions

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Kepictronics

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Assy Fe

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UHIMA Technologies

Türkiye . 592 parts In-Stock

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Kulean Microsystems

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Akira Global LLC

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Computer Components Inc. - USA

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iodParts Technologies Inc.

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Overview

Looking for a reliable and high-quality diode for your power applications? Look no further than the MBRD360G by Onsemi. With a maximum operating temperature of 175 °C and a peak reflow temperature of 260 °C, this Schottky rectifier diode offers superior performance and efficiency. Its matte tin terminal finish and gull wing terminal form make it easy to install, while its small outline package style ensures compactness. Ideal for a wide range of power applications, the MBRD360G provides a maximum output current of 3A and a maximum repetitive peak reverse voltage of 60V. Trust Onsemi for cutting-edge technology and unmatched reliability in diodes and rectifiers.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good protection for the diode, making it durable and long-lasting.

Config: SINGLE

Simplifies circuit design and installation, especially for basic rectification applications.

Surface Mount: YES

Facilitates easy and secure mounting on PCBs, saving space and allowing for automated assembly.

Application: POWER

Designed for power applications, ensuring stable and efficient performance under high voltage and current conditions.

Maximum Operating Temperature: 175 °C

Can operate reliably at high temperatures, suitable for various industrial and automotive environments.

Technology: SCHOTTKY

Utilizes Schottky technology for lower forward voltage drop and faster switching speeds, improving overall efficiency.

Maximum Repetitive Peak Reverse Voltage: 60 V

Suitable for applications requiring rectification of moderate voltage signals, preventing damage from reverse currents.

Diode Element Material: SILICON

Utilizes silicon material for the diode element, ensuring high reliability and performance in various operating conditions.

Technical Specifications

Diodes & Rectifiers MBRD360G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

POWER

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.6 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

75 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

60 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MBRD360G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

NSN

5961-01-611-9934, 5961016119934

NIIN

016119934

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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