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LV5609V-HAS-TLM-E

Onsemi

LV5609V-HAS-TLM-E by Onsemi

LV5609V-HAS-TLM-E by Onsemi is a BICMOS tech IC with 20 terminals, 3.3V supply, and temp range of -20 to 80 °C. Ideal for commercial applications requiring small outline package style and surface mount compatibility.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Chip Stock

USA . 56,000 parts In-Stock

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Vyrian

USA . 9,920 parts In-Stock

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Digiode

USA . 1,656 parts In-Stock

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AZTECH Wire

Italy . 1,215 parts In-Stock

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$20.580

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SupplyDigital Components

Austria . 6,696 parts In-Stock

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Microchip USA

USA . 5,896 parts In-Stock

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Kulean Microsystems

USA . 3,709 parts In-Stock

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Problanco Electronics

Mexico . 3,029 parts In-Stock

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TANS Electronics

Latvia . 1,759 parts In-Stock

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Corphita

USA . 1,640 parts In-Stock

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UHIMA Technologies

Türkiye . 667 parts In-Stock

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Corohmni

South Africa . 187 parts In-Stock

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Overview

Elevate your electronic designs with the LV5609V-HAS-TLM-E by Onsemi. Crafted with precision and expertise, this innovative product falls under the category of Other Function Interface ICs, offering unparalleled quality and performance. With a small outline, shrink pitch package style and a commercial extended temperature grade, this IC is perfect for a wide range of applications. Experience the value and benefits of this advanced technology, providing customers with reliability and efficiency like never before. Trust Onsemi to deliver excellence in every product, setting new standards in the industry.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good durability and protection for the internal components of the IC, ensuring long-term reliability.

Surface Mount: YES

Surface mount design allows for easy and convenient PCB assembly, saving time and effort in the manufacturing process.

Power Supplies (V): 3.3

Operating at 3.3V supply voltage makes this IC compatible with a wide range of electronic devices and systems.

Maximum Operating Temperature: 80 °C

With a maximum operating temperature of 80 °C, this IC can function effectively in a variety of environments without overheating.

Technology: BICMOS

Utilizing BICMOS technology provides a balance between high-speed performance and low power consumption, making this IC suitable for a range of applications.

Technical Specifications

Other Function Interface ICs LV5609V-HAS-TLM-E attributes and parameters. Explore more Other Function Interface ICs devices from Onsemi

Specs

JESD-30 Code:

R-PDSO-G20

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

3

No. of Terminals:

20

Maximum Operating Temperature:

80 Cel

Minimum Operating Temperature:

-20 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SSOP20,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

Sub-Category:

Other Interface ICs

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Technology:

BICMOS

Temperature Grade:

Terminal Finish:

TIN BISMUTH

Terminal Form:

Terminal Pitch:

.635 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

LV5609V-HAS-TLM-E Interface ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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