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LC898123AXC-VH

Onsemi

LC898123AXC-VH by Onsemi

LC898123AXC-VH by Onsemi is a 35-terminal IC with CMOS technology. It operates b/w -30 to 85 °C and has a supply voltage range of 2.6V to 3.6V. With a very thin profile, fine pitch package style, it's ideal for interface circuit applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,593 parts In-Stock

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Digiode

USA . 1,384 parts In-Stock

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SupplyDigital Components

Austria . 4,134 parts In-Stock

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Problanco Electronics

Mexico . 2,492 parts In-Stock

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Kulean Microsystems

USA . 1,377 parts In-Stock

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TANS Electronics

Latvia . 818 parts In-Stock

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Corohmni

South Africa . 490 parts In-Stock

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Corphita

USA . 345 parts In-Stock

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UHIMA Technologies

Türkiye . 209 parts In-Stock

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Overview

Experience seamless and efficient connectivity with the LC898123AXC-VH by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality and reliability in their products. The LC898123AXC-VH falls under the category of Other Function Interface ICs and is perfect for a wide range of applications. With a focus on value and performance, this product offers customers unparalleled benefits such as ease of use, durability, and versatility. Upgrade your electronic devices with the LC898123AXC-VH and enjoy the advantages it brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic material provides good durability and protects the internal components of the IC.

Surface Mount: YES

Allows for easy and efficient installation on circuit boards, saving time and effort.

Maximum Supply Voltage: 3.6 V

Can handle higher supply voltages, making it suitable for a wide range of applications.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient use of space on the circuit board.

No. of Terminals: 35

Provides multiple connection points for various functions within the IC.

Minimum Operating Temperature: -30 °C

Can operate in low-temperature environments without issues, making it versatile.

Technical Specifications

Other Function Interface ICs LC898123AXC-VH attributes and parameters. Explore more Other Function Interface ICs devices from Onsemi

Specs

Additional Features:

IT ALSO OPERATES AT 3V

Interface IC Type:

JESD-30 Code:

R-PBGA-B35

JESD-609 Code:

e1

Length:

3.39 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

35

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-30 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Maximum Seated Height:

.45 mm

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

2.6 V

Nominal Supply Voltage:

2.8 V

Maximum Supply Voltage-1:

3.6 V

Minimum Supply Voltage-1:

2.6 V

Nominal Supply Voltage-1:

2.8 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.4 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

2.3 mm

Trade Compliance

LC898123AXC-VH Interface ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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