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LC898119XC-MH

Onsemi

LC898119XC-MH by Onsemi

LC898119XC-MH by Onsemi is a CMOS interface IC with 25 terminals in a grid array package. It operates at supply voltages ranging from 2.6V to 3.6V and has a peak reflow temperature of 260 °C. This IC is suitable for applications requiring a very thin profile and fine pitch design, such as consumer electronics and communication devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 8,985 parts In-Stock

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Digiode

USA . 749 parts In-Stock

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AZTECH Wire

Italy . 739 parts In-Stock

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$9.610

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Authorized Procurement Solutions

USA . 6,000 parts In-Stock

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Problanco Electronics

Mexico . 3,839 parts In-Stock

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SupplyDigital Components

Austria . 1,799 parts In-Stock

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Kulean Microsystems

USA . 788 parts In-Stock

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Corphita

USA . 754 parts In-Stock

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Corohmni

South Africa . 441 parts In-Stock

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UHIMA Technologies

Türkiye . 328 parts In-Stock

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Microchip USA

USA . 228 parts In-Stock

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TANS Electronics

Latvia . 12 parts In-Stock

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Overview

Discover the innovation and quality of Onsemi with the LC898119XC-MH, a top-of-the-line Other Function Interface IC. Designed for maximum performance and reliability, this product offers unparalleled value to customers looking for cutting-edge technology. Whether it's for consumer electronics, automotive applications, or industrial automation, this interface circuit delivers seamless integration and enhanced functionality. Trust Onsemi for superior products that exceed expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good durability and protection for the internal components of the IC, making it suitable for various applications.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving time and effort during production.

Maximum Supply Voltage: 3.6 V

The high maximum supply voltage ensures compatibility with a wide range of systems and devices, increasing the versatility of this IC.

Package Shape: SQUARE

The square shape of the package allows for efficient use of space on the PCB, making it ideal for applications where board real estate is limited.

No. of Terminals: 25

With a high number of terminals, this IC can support complex interface functions and connections, enhancing its utility for advanced applications.

Minimum Supply Voltage: 2.6 V

The low minimum supply voltage ensures efficient power consumption and compatibility with systems that require lower voltages, expanding the range of applications for this IC.

Terminal Finish: TIN SILVER COPPER

This finish provides good conductivity, corrosion resistance, and solderability, ensuring reliable connections and long-term performance of the IC in various environments.

Technology: CMOS

CMOS technology offers low power consumption, high noise immunity, and fast switching speeds, making this IC energy-efficient and reliable for different digital applications.

Nominal Supply Voltage: 3 V

The nominal supply voltage of 3V is a common voltage level used in many electronic systems, ensuring compatibility and ease of integration with existing setups.

Technical Specifications

Other Function Interface ICs LC898119XC-MH attributes and parameters. Explore more Other Function Interface ICs devices from Onsemi

Specs

Interface IC Type:

JESD-30 Code:

S-PBGA-B25

JESD-609 Code:

e1

Length:

2 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

25

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Maximum Seated Height:

.675 mm

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

2.6 V

Nominal Supply Voltage:

3 V

Maximum Supply Voltage-1:

3.6 V

Minimum Supply Voltage-1:

2.6 V

Surface Mount:

YES

Technology:

CMOS

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.4 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

2 mm

Trade Compliance

LC898119XC-MH Interface ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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