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LA75501V

Onsemi

LA75501V by Onsemi

LA75501V by Onsemi is a Receiver IC with 30 terminals, operating at temperatures from -20 to 85 °C. It features a power supply of 5V and a max supply current of 73.6mA. This Audio/Video Demodulator is designed for applications requiring small outline, shrink pitch package style in plastic/epoxy material.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

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Digiode

USA . 576 parts In-Stock

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Vyrian

USA . 296 parts In-Stock

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Problanco Electronics

Mexico . 5,923 parts In-Stock

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SupplyDigital Components

Austria . 4,480 parts In-Stock

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TANS Electronics

Latvia . 4,466 parts In-Stock

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Kulean Microsystems

USA . 2,811 parts In-Stock

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UHIMA Technologies

Türkiye . 857 parts In-Stock

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857

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Corphita

USA . 662 parts In-Stock

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Corohmni

South Africa . 176 parts In-Stock

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Overview

Transform your audio/video experience with the LA75501V by Onsemi, a high-quality receiver IC that delivers exceptional performance and reliability. Manufactured by industry leader Onsemi, this product is designed to meet the demands of modern audio/video systems, offering crystal-clear demodulation and superior signal processing. Whether you're looking to upgrade your home entertainment system or enhance your professional audio setup, the LA75501V provides unmatched value and benefits to customers seeking top-notch quality and functionality. Elevate your audio/video experience with Onsemi's LA75501V today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material ensures durability and protects the internal components of the receiver IC, making it suitable for long-term use.

Surface Mount: YES

Surface mount technology makes it easier to install the receiver IC on a circuit board, saving space and allowing for efficient assembly.

General IC Type: AUDIO/VIDEO DEMODULATOR

The audio/video demodulator type allows the receiver IC to process both audio and video signals, making it versatile for various applications.

Power Supplies (V): 5

Operating at 5V ensures compatibility with standard power sources, making integration into existing systems convenient.

No. of Terminals: 30

Having 30 terminals provides ample connectivity options for input and output signals, allowing for versatile usage in different circuit designs.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85 °C, the receiver IC can perform reliably even in high-temperature environments.

Minimum Operating Temperature: -20 °C

The receiver IC can operate at temperatures as low as -20 °C, ensuring functionality in diverse temperature conditions.

Terminal Position: DUAL

Dual terminal positions provide flexibility in circuit board layout and allow for efficient signal routing within the system.

Terminal Form: GULL WING

Gull wing terminal form offers secure solder connections and ease of soldering during assembly, enhancing the reliability of the receiver IC.

Maximum Supply Current: 73.6 mA

The maximum supply current of 73.6 mA indicates efficient power consumption, making the receiver IC suitable for low-power applications.

Terminal Pitch: 0.635 mm

The small terminal pitch of 0.635 mm allows for compact integration on a circuit board, enabling high-density placement of components.

Technical Specifications

Receiver ICs LA75501V attributes and parameters. Explore more Receiver ICs devices from Onsemi

Specs

General IC Type:

JESD-30 Code:

R-PDSO-G30

No. of Terminals:

30

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-20 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SSOP30,.3

Package Shape:

Package Style (Meter):

SMALL OUTLINE, SHRINK PITCH

Power Supplies (V):

5

Qualification:

Not Qualified

Sub-Category:

Other Consumer ICs

Maximum Supply Current:

73.6 mA

Surface Mount:

YES

Temperature Grade:

Terminal Form:

Terminal Pitch:

.635 mm

Terminal Position:

DUAL

Trade Compliance

LA75501V General Purpose ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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