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LA75501

Onsemi

LA75501 by Onsemi

LA75501 by Onsemi is an audio/video demodulator IC with 24 terminals. Operating at temperatures from -20 °C to 70°C, it requires a 5V power supply. Housed in a rectangular plastic/epoxy package, it is ideal for receiver applications in commercial-grade electronics.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,090 parts In-Stock

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Vyrian

USA . 756 parts In-Stock

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Kulean Microsystems

USA . 5,835 parts In-Stock

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TANS Electronics

Latvia . 3,344 parts In-Stock

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Corphita

USA . 1,406 parts In-Stock

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SupplyDigital Components

Austria . 1,153 parts In-Stock

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UHIMA Technologies

Türkiye . 490 parts In-Stock

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Kepictronics

USA . 483 parts In-Stock

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Corohmni

South Africa . 166 parts In-Stock

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Problanco Electronics

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Overview

Experience superior audio and video demodulation with the LA75501 by Onsemi. Known for their high-quality products, Onsemi delivers reliable performance and durability. The LA75501 is perfect for a wide range of applications in the receiver IC category, offering customers unparalleled value and benefits. Upgrade your audio and video systems with the LA75501 and enjoy crystal-clear sound and visuals like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material is durable and cost-effective, providing protection for the internal components of the receiver IC.

Package Shape: RECTANGULAR

Rectangular shape allows for easy integration into electronic circuits and PCB designs.

General IC Type: AUDIO/VIDEO DEMODULATOR

Specifically designed for audio/video demodulation, ensuring high-quality signal processing.

Power Supplies (V): 5

Operates on a standard 5V power supply, making it compatible with a wide range of devices and systems.

No. of Terminals: 24

Sufficient number of terminals for connecting to various components and peripherals within a circuit.

Maximum Operating Temperature: 70 °C

Can operate at temperatures up to 70 °C, suitable for most electronic devices and environments.

Minimum Operating Temperature: -20 °C

Capable of operating in colder temperatures down to -20 °C, providing versatility in usage.

Terminal Pitch: 1.78 mm

The tight terminal pitch of 1.78mm allows for compact mounting on a PCB, saving space in electronic designs.

Technical Specifications

Receiver ICs LA75501 attributes and parameters. Explore more Receiver ICs devices from Onsemi

Specs

General IC Type:

JESD-30 Code:

R-PDIP-T24

No. of Terminals:

24

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-20 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SDIP24,.3

Package Shape:

Package Style (Meter):

IN-LINE, SHRINK PITCH

Power Supplies (V):

5

Qualification:

Not Qualified

Sub-Category:

Other Consumer ICs

Surface Mount:

NO

Temperature Grade:

Terminal Form:

Terminal Pitch:

1.78 mm

Terminal Position:

DUAL

Trade Compliance

LA75501 General Purpose ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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