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LA6583M

Onsemi

LA6583M by Onsemi

LA6583M by Onsemi is a Motion Control IC with 12V supply, 10 terminals, and 9mA max supply current. It operates b/w -30 °C to 90°C and uses bipolar technology. Ideal for applications requiring precise motion control in compact spaces.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 809 parts In-Stock

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Vyrian

USA . 745 parts In-Stock

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TANS Electronics

Latvia . 8,183 parts In-Stock

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Kulean Microsystems

USA . 6,659 parts In-Stock

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6,659

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SupplyDigital Components

Austria . 5,424 parts In-Stock

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Problanco Electronics

Mexico . 3,954 parts In-Stock

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Corphita

USA . 2,057 parts In-Stock

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UHIMA Technologies

Türkiye . 635 parts In-Stock

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635

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Corohmni

South Africa . 174 parts In-Stock

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Kepictronics

USA . 93 parts In-Stock

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Overview

Discover the efficiency and reliability of the LA6583M Motion Control IC by Onsemi. Designed with high-quality materials and advanced technology, this product offers seamless motion control solutions for a wide range of applications. From robotics to industrial automation, this IC delivers precision and performance, ensuring smooth operation every time. Trust Onsemi's reputation for excellence and experience the value and benefits that the LA6583M brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making it ideal for product designs that require both strength and weight efficiency.

Surface Mount: YES

Surface mount technology allows for easy and efficient installation on circuit boards, saving time and effort during assembly.

Nominal Supply Voltage (Vsup): 12 V

A 12V supply voltage is commonly used in many applications, making this product compatible with a wide range of systems.

Maximum Operating Temperature: 90 °C

With a high maximum operating temperature, this product is suitable for use in environments where temperature fluctuations may occur.

Technology: BIPOLAR

Bipolar technology offers high-speed performance and precise control, making this product a reliable choice for motion control applications.

Technical Specifications

Motion Control ICs LA6583M attributes and parameters. Explore more Motion Control ICs devices from Onsemi

Specs

JESD-30 Code:

R-PDSO-G10

No. of Terminals:

10

Maximum Operating Temperature:

90 Cel

Minimum Operating Temperature:

-30 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOP10,.25,40

Package Shape:

Package Style (Meter):

SMALL OUTLINE, SHRINK PITCH

Power Supplies (V):

12

Qualification:

Not Qualified

Sub-Category:

Motion Control Electronics

Maximum Supply Current (Isup):

9 mA

Nominal Supply Voltage (Vsup):

12 V

Surface Mount:

YES

Technology:

BIPOLAR

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1 mm

Terminal Position:

DUAL

Trade Compliance

LA6583M Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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