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KSA992FBTA

Onsemi

KSA992FBTA by Onsemi

The Onsemi KSA992FBTA is a PNP BJT with max power dissipation of 0.5W, min hFE of 300, and fT of 50MHz. Ideal for low-power applications requiring high DC current gain and temperature resistance up to 150°C.

Median Price

$0.049

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 11,620 parts In-Stock

1+ parts

$0.043

100+ parts

$0.027

1k+ parts

-

10k+ parts

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11,620

$0.043

$0.027

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Mouser Electronics

USA . 127 parts In-Stock

1+ parts

$0.320

100+ parts

$0.216

1k+ parts

$0.069

10k+ parts

$0.048

127

$0.320

$0.216

$0.069

$0.048

Rochester

USA . 5,670,100 parts In-Stock

1+ parts

-

100+ parts

$0.053

1k+ parts

$0.044

10k+ parts

$0.040

5,670,100

-

$0.053

$0.044

$0.040

DigiKey

USA . 5,670,100 parts In-Stock

1+ parts

-

100+ parts

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$0.070

5,670,100

-

-

-

$0.070

Verical

USA . 1,696,100 parts In-Stock

1+ parts

-

100+ parts

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$0.049

1,696,100

-

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$0.049

Flip Electronics (Authorized)

USA . 1,211,698 parts In-Stock

1+ parts

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1,211,698

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Master Electronics

USA . 8,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

$0.042

8,000

-

-

-

$0.042

Chip1Stop

Japan . 500 parts In-Stock

1+ parts

-

100+ parts

$0.019

1k+ parts

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500

-

$0.019

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,201 parts In-Stock

1+ parts

$0.042

100+ parts

-

1k+ parts

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3,201

$0.042

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-

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Nova Conductors

Japan . 32 parts In-Stock

1+ parts

$0.058

100+ parts

-

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32

$0.058

-

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TME

Poland . 108 parts In-Stock

1+ parts

$0.268

100+ parts

$0.080

1k+ parts

$0.065

10k+ parts

$0.049

108

$0.268

$0.080

$0.065

$0.049

DigiKey Marketplace

USA . 5,672,000 parts In-Stock

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5,672,000

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Vyrian

USA . 2,031,702 parts In-Stock

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2,031,702

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Flip Electronics

USA . 1,221,698 parts In-Stock

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1,221,698

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Chip Stock

USA . 63,000 parts In-Stock

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63,000

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IBS Electronics

USA . 8,000 parts In-Stock

1+ parts

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100+ parts

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$0.059

8,000

-

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$0.059

Huijzer Components

Netherlands . 4,000 parts In-Stock

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4,000

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Distributors (Availability)

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Ampacity Inc.

Singapore . 2,031,535 parts In-Stock

1+ parts

$0.016

100+ parts

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2,031,535

$0.016

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Corohmni

South Africa . 225 parts In-Stock

1+ parts

$0.019

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225

$0.019

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Corphita

USA . 1,394 parts In-Stock

1+ parts

$0.040

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1,394

$0.040

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Aranea Global

USA . 1,000 parts In-Stock

1+ parts

$0.057

100+ parts

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1k+ parts

$0.054

10k+ parts

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1,000

$0.057

-

$0.054

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Argo Parts USA

USA . 1,471 parts In-Stock

1+ parts

$0.058

100+ parts

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$0.056

1,471

$0.058

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-

$0.056

Continental Prestige Electronics

USA . 1,697,569 parts In-Stock

1+ parts

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$0.050

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1,697,569

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$0.050

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QUARKTWIN TECHNOLOGY LTD

USA . 28,688 parts In-Stock

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28,688

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Glotronic Ltd.

UK . 9,600 parts In-Stock

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9,600

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TANS Electronics

Latvia . 7,729 parts In-Stock

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7,729

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Problanco Electronics

Mexico . 5,414 parts In-Stock

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5,414

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Kulean Microsystems

USA . 4,701 parts In-Stock

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4,701

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Perfect Parts

USA . 4,207 parts In-Stock

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4,207

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Supply Digital

USA . 953 parts In-Stock

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953

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UHIMA Technologies

Türkiye . 777 parts In-Stock

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777

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SupplyDigital Components

Austria . 713 parts In-Stock

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713

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Authorized Procurement Solutions

USA . 500 parts In-Stock

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500

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Overview

Unlock the power of small signal bipolar junction transistors with the KSA992FBTA by Onsemi. Manufactured with precision and expertise, this PNP transistor offers reliable performance in a variety of applications. Whether you're designing amplifiers, switches, or oscillators, this SINGLE configuration transistor delivers maximum power dissipation and a minimum DC current gain for optimal efficiency. Trust Onsemi to provide quality components that meet your needs. Experience the value and benefits of the KSA992FBTA today.

Feature Benefit Bullets

Polarity or Channel Type: PNP

PNP transistors are commonly used in applications where the majority charge carriers are holes, making them suitable for various circuit designs.

Configuration: SINGLE

Single configuration transistors are easy to use and integrate into circuits, making them convenient for diverse electronic projects.

Maximum Power Dissipation (Abs): 0.5 W

With a maximum power dissipation of 0.5W, this transistor can handle moderate power levels efficiently, allowing for reliable performance.

Minimum DC Current Gain (hFE): 300

A high minimum DC current gain of 300 ensures that the transistor amplifies input signals effectively, making it suitable for applications requiring signal amplification.

Maximum Operating Temperature: 150 °C

The transistor can operate efficiently at temperatures up to 150°C, enhancing its versatility in various environmental conditions.

Maximum Collector Current (IC): 0.05 A

Capable of handling a maximum collector current of 0.05A, this transistor is suitable for low to moderate current applications, providing flexibility in circuit design.

Terminal Finish: MATTE TIN

Matte tin terminal finish offers good solderability and conductivity, ensuring reliable connections and stable performance in circuit applications.

Nominal Transition Frequency (fT): 50 MHz

With a nominal transition frequency of 50MHz, the transistor can switch between on and off states quickly, making it suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) KSA992FBTA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

300

JESD-609 Code:

e3

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Nominal Transition Frequency (fT):

Trade Compliance

KSA992FBTA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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