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KSA992FBU

Onsemi

KSA992FBU by Onsemi

The Onsemi KSA992FBU is a PNP BJT transistor with a single configuration, ideal for amplifier applications. It has a max power dissipation of 0.5W, hFE of 300, and can operate at temperatures up to 150°C. With a collector-emitter voltage of 120V and collector current of 0.05A, it offers reliable performance in various electronic circuits.

Median Price

$0.078

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Distrelec

Netherlands . 9,122 parts In-Stock

1+ parts

$0.327

100+ parts

$0.272

1k+ parts

$0.174

10k+ parts

$0.120

9,122

$0.327

$0.272

$0.174

$0.120

Mouser Electronics

USA . 40,218 parts In-Stock

1+ parts

$0.330

100+ parts

$0.126

1k+ parts

$0.069

10k+ parts

$0.051

40,218

$0.330

$0.126

$0.069

$0.051

Element14

Singapore . 96,373 parts In-Stock

1+ parts

-

100+ parts

$0.180

1k+ parts

$0.089

10k+ parts

$0.083

96,373

-

$0.180

$0.089

$0.083

Farnell

UK . 82,874 parts In-Stock

1+ parts

-

100+ parts

$0.090

1k+ parts

$0.067

10k+ parts

$0.050

82,874

-

$0.090

$0.067

$0.050

Rochester

USA . 12,037 parts In-Stock

1+ parts

-

100+ parts

$0.057

1k+ parts

$0.047

10k+ parts

$0.042

12,037

-

$0.057

$0.047

$0.042

RS (Exports)

UK . 9,800 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.056

9,800

-

-

-

$0.056

Master Electronics

USA . 2,600 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.049

10k+ parts

$0.044

2,600

-

-

$0.049

$0.044

Verical

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.065

10k+ parts

$0.061

2,500

-

-

$0.065

$0.061

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,379 parts In-Stock

1+ parts

$0.035

100+ parts

-

1k+ parts

-

10k+ parts

-

2,379

$0.035

-

-

-

Nova Conductors

Japan . 58 parts In-Stock

1+ parts

$0.080

100+ parts

-

1k+ parts

-

10k+ parts

-

58

$0.080

-

-

-

TME

Poland . 2,519 parts In-Stock

1+ parts

$0.310

100+ parts

$0.119

1k+ parts

$0.073

10k+ parts

$0.060

2,519

$0.310

$0.119

$0.073

$0.060

Flip Electronics

USA . 39,999 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

39,999

-

-

-

-

Chip Stock

USA . 34,000 parts In-Stock

1+ parts

-

100+ parts

-

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10k+ parts

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34,000

-

-

-

-

Vyrian

USA . 32,853 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

32,853

-

-

-

-

NAC Semi

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.078

10,000

-

-

-

$0.078

IBS Electronics

USA . 2,600 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.068

10k+ parts

$0.062

2,600

-

-

$0.068

$0.062

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 28,276 parts In-Stock

1+ parts

$0.031

100+ parts

-

1k+ parts

-

10k+ parts

-

28,276

$0.031

-

-

-

Corphita

USA . 2,166 parts In-Stock

1+ parts

$0.033

100+ parts

-

1k+ parts

-

10k+ parts

-

2,166

$0.033

-

-

-

Corohmni

South Africa . 177 parts In-Stock

1+ parts

$0.037

100+ parts

-

1k+ parts

-

10k+ parts

-

177

$0.037

-

-

-

Argo Parts USA

USA . 2,465 parts In-Stock

1+ parts

$0.080

100+ parts

-

1k+ parts

-

10k+ parts

$0.078

2,465

$0.080

-

-

$0.078

Netroflash

USA . 1,000 parts In-Stock

1+ parts

$0.080

100+ parts

-

1k+ parts

$0.076

10k+ parts

$0.074

1,000

$0.080

-

$0.076

$0.074

Continental Prestige Electronics

USA . 109,062 parts In-Stock

1+ parts

$0.351

100+ parts

$0.134

1k+ parts

$0.058

10k+ parts

$0.046

109,062

$0.351

$0.134

$0.058

$0.046

Metaverse IC Inc.

Canada . 36,530 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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36,530

-

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 23,381 parts In-Stock

1+ parts

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23,381

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Kepictronics

USA . 20,000 parts In-Stock

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20,000

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-

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Authorized Procurement Solutions

USA . 20,000 parts In-Stock

1+ parts

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20,000

-

-

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Perfect Parts

USA . 17,759 parts In-Stock

1+ parts

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-

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17,759

-

-

-

-

Problanco Electronics

Mexico . 7,727 parts In-Stock

1+ parts

-

100+ parts

-

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7,727

-

-

-

-

TANS Electronics

Latvia . 7,488 parts In-Stock

1+ parts

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100+ parts

-

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-

10k+ parts

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7,488

-

-

-

-

Kulean Microsystems

USA . 3,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

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3,500

-

-

-

-

SupplyDigital Components

Austria . 2,308 parts In-Stock

1+ parts

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2,308

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-

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-

Supply Digital

USA . 2,298 parts In-Stock

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2,298

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-

-

-

Glotronic Ltd.

UK . 1,800 parts In-Stock

1+ parts

-

100+ parts

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-

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1,800

-

-

-

-

UHIMA Technologies

Türkiye . 466 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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466

-

-

-

-

Assy Fe

Spain . 79 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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79

-

-

-

-

Overview

Enhance your electronic projects with the reliable, high-quality KSA992FBU PNP Small Signal Bipolar Junction Transistor by Onsemi. Manufactured with precision and expertise, this transistor is ideal for amplifier applications, offering a seamless performance that meets the demands of various circuit designs. With a maximum collector-emitter voltage of 120V and a minimum DC current gain of 300, this transistor provides exceptional value and efficiency to customers looking for superior components for their projects. Trust Onsemi for top-of-the-line transistors that deliver unparalleled results every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

Single configuration simplifies circuit design and makes it easier to integrate into existing systems.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in such circuits.

Package Shape: ROUND

Round shape allows for easy mounting and installation in various devices and circuits.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and easy soldering in circuit boards.

No. of Terminals: 3

Three terminals offer flexibility in circuit design and connectivity options.

Maximum Power Dissipation (Abs): 0.5 W

With a maximum power dissipation of 0.5W, this transistor can handle moderate power levels in applications.

Package Style (Meter): CYLINDRICAL

Cylindrical package style provides a compact form factor for space-constrained applications.

Minimum DC Current Gain (hFE): 300

High DC current gain ensures efficient amplification and signal processing in the circuit.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high-temperature environments.

Maximum Collector-Emitter Voltage: 120 V

A high collector-emitter voltage rating of 120V allows for safe operation in various voltage levels.

Transistor Element Material: SILICON

Silicon is a common material for transistors known for its reliability and performance.

Maximum Collector Current (IC): 0.05 A

With a maximum collector current of 0.05A, this transistor is suitable for low to moderate current applications.

Terminal Finish: TIN

Tin terminal finish offers good conductivity and resistance to corrosion for reliable connections.

Terminal Position: BOTTOM

Bottom terminal position allows for easy PCB mounting and soldering in circuit board layouts.

Nominal Transition Frequency (fT): 100 MHz

High transition frequency of 100MHz enables fast switching speeds and high-frequency operation in circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) KSA992FBU attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

120 V

Configuration:

Minimum DC Current Gain (hFE):

300

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

KSA992FBU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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