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KSA928AOTA

Onsemi

KSA928AOTA by Onsemi

KSA928AOTA by Onsemi is a PNP BJT transistor with 3 terminals, ideal for amplifier applications. It offers a max power dissipation of 1W, hFE of 100, and fT of 120MHz. With a max collector-emitter voltage of 30V and operating temp up to 150°C, it's suitable for various electronic circuits.

Median Price

$0.093

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 351,704 parts In-Stock

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$0.070

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$0.070

Flip Electronics (Authorized)

USA . 351,704 parts In-Stock

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Rochester

USA . 3,552 parts In-Stock

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$0.116

1k+ parts

$0.096

10k+ parts

$0.086

3,552

-

$0.116

$0.096

$0.086

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,599 parts In-Stock

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$0.080

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1,599

$0.080

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Digiode

USA . 1,221 parts In-Stock

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$0.093

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$0.093

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Flip Electronics

USA . 351,704 parts In-Stock

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351,704

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DigiKey Marketplace

USA . 351,704 parts In-Stock

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$0.080

351,704

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$0.080

Chip Stock

USA . 41,000 parts In-Stock

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41,000

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Distributors (Availability)

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Corohmni

South Africa . 499 parts In-Stock

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$0.080

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499

$0.080

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Corphita

USA . 712 parts In-Stock

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$0.088

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712

$0.088

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Metaverse IC Inc.

Canada . 36,530 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 28,542 parts In-Stock

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Perfect Parts

USA . 8,746 parts In-Stock

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SupplyDigital Components

Austria . 8,075 parts In-Stock

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Problanco Electronics

Mexico . 6,747 parts In-Stock

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Kulean Microsystems

USA . 6,652 parts In-Stock

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Supply Digital

USA . 2,381 parts In-Stock

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TANS Electronics

Latvia . 897 parts In-Stock

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UHIMA Technologies

Türkiye . 862 parts In-Stock

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Kepictronics

USA . 500 parts In-Stock

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500

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Microchip USA

USA . 407 parts In-Stock

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407

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Overview

Elevate your projects with the KSA928AOTA by Onsemi! Manufactured by a trusted brand, this small signal bipolar junction transistor offers high-quality performance ideal for amplifier applications. With a single configuration and a maximum collector current of 2A, this PNP transistor delivers reliability and efficiency. Whether you're working on audio equipment or other electronic devices, the KSA928AOTA provides value, benefits, and advantages that will exceed your expectations. Upgrade your designs with this powerful component today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: PNP

Suitable for applications requiring PNP transistors, offering versatility in circuit design.

Configuration: SINGLE

Simplifies circuit design by using a single transistor in amplifier applications.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in amplification circuits.

Package Shape: ROUND

Compact and space-saving design for easy integration into circuits and PCBs with tight constraints.

Terminal Form: THROUGH-HOLE

Facilitates easy soldering onto PCBs, providing a secure and reliable connection.

Maximum Power Dissipation (Abs): 1 W

Handles power efficiently, making it suitable for low-power amplifier applications.

Maximum Collector-Emitter Voltage: 30 V

Reliable voltage handling capability, ensuring stability in varying voltage conditions.

Maximum Collector Current (IC): 2 A

Supports high current flow, making it ideal for applications requiring higher power outputs.

Nominal Transition Frequency (fT): 120 MHz

Ensures fast switching speeds and high-frequency operation, suitable for applications requiring high-frequency amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) KSA928AOTA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

1 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

KSA928AOTA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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