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KSA931O

Onsemi

KSA931O by Onsemi

KSA931O by Onsemi is a PNP BJT transistor with hFE of 70, VCE of 60V, and IC of 0.7A. Ideal for switching applications due to its high transition frequency of 100MHz. Its cylindrical package with through-hole terminals makes it suitable for various electronic designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,562 parts In-Stock

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Digiode

USA . 417 parts In-Stock

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417

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SupplyDigital Components

Austria . 6,850 parts In-Stock

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6,850

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Corphita

USA . 2,891 parts In-Stock

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Supply Digital

USA . 2,316 parts In-Stock

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Kulean Microsystems

USA . 1,164 parts In-Stock

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TANS Electronics

Latvia . 900 parts In-Stock

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900

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UHIMA Technologies

Türkiye . 611 parts In-Stock

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Corohmni

South Africa . 147 parts In-Stock

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Problanco Electronics

Mexico . 141 parts In-Stock

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Overview

Enhance your electronic projects with the KSA931O by Onsemi, a high-quality PNP bipolar junction transistor ideal for switching applications. Onsemi is a trusted manufacturer known for its reliable components, and this transistor is no exception. With a maximum collector-emitter voltage of 60V and a minimum DC current gain of 70, this transistor offers superior performance and efficiency. Whether you're working on amplifiers, power supplies, or control systems, the KSA931O provides the value, benefits, and advantages you need to bring your designs to life. Trust Onsemi and elevate your projects today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides protection and insulation for the transistor, ensuring durability and preventing damage from external factors.

Polarity or Channel Type: PNP

Allows for easy integration into PNP circuits, making it versatile for various electronic applications.

Configuration: SINGLE

Simplified design with a single transistor configuration, easier to work with and troubleshoot.

Transistor Application: SWITCHING

Designed for efficient switching applications, offering high-speed performance and low power consumption.

Package Shape: ROUND

Compact round shape for easy mounting and fitting in tight spaces.

Terminal Form: THROUGH-HOLE

Traditional through-hole terminals for easy soldering and reliable connections.

No. of Terminals: 3

Simplified 3-terminal design for straightforward circuit connections and compatibility.

Package Style (Meter): CYLINDRICAL

Cylindrical package style for a standardized and easy-to-handle form factor.

Minimum DC Current Gain (hFE): 70

High minimum DC current gain ensures consistent and stable amplification of signals.

Maximum Collector-Emitter Voltage: 60 V

Supports higher voltage applications, offering versatility and compatibility with various circuits.

Transistor Element Material: SILICON

Silicon material ensures high performance, reliability, and efficiency of the transistor.

Maximum Collector Current (IC): 0.7 A

Capable of handling up to 0.7 amps of collector current, suitable for medium power applications.

Terminal Position: BOTTOM

Bottom terminal position for easy PCB mounting and convenient circuit integration.

Nominal Transition Frequency (fT): 100 MHz

High nominal transition frequency for fast signal processing and optimal performance in high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) KSA931O attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

70

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

KSA931O Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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