Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
FQP11N40C by Onsemi is a N-CHANNEL Power FET with 400V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max IDM of 42A and EAS of 360mJ, making it suitable for high-power operations. With a 0.53 ohm RDS(on) and 135W Pdiss, this MOSFET operates in ENHANCEMENT MODE up to 150°C.
Median Price
$1.398
Lifecycle Status
Suppliers In-Stock
24
In-Stock Inventory
1k+
Farnell
1+ parts
$0.993
100+ parts
$0.903
1k+ parts
$0.739
10k+ parts
-
Arrow
$1.060
$0.994
$0.919
Element14
$1.200
$1.140
$1.040
$0.990
Mouser Electronics
$2.120
$1.240
Newark
$2.160
$1.230
$1.020
$0.927
Chip1Stop
$2.710
$1.130
$1.010
$0.980
DigiKey
$2.960
$1.326
$0.991
$0.901
Rochester
$1.220
Verical
$1.057
$0.944
RS (Exports)
$1.576
$1.508
Nova Conductors
$0.828
Digiode
$0.862
TME
$2.080
$1.260
Chip Stock
Vyrian
NAC Semi
$1.560
$1.440
Flip Electronics
IBS Electronics
$1.417
$1.346
ComSIT Distribution GmbH
LIBRA Elektronik GmbH
Martec Srl
Prism Electronics
Specialty Parts & Electronic Components, Inc. (S.P.E.C.)
LittleDiode
Ampacity Inc.
$0.770
Corohmni
$0.811
Corphita
$0.816
Netroflash
Argo Parts USA
Component Stockers USA
$0.970
$0.910
$0.820
Continental Prestige Electronics
$1.270
$0.572
Microchip USA
$11.050
Perfect Parts
Lixinc
Assy Fe
TANS Electronics
SupplyDigital Components
Glotronic Ltd.
Kulean Microsystems
S.R.D Solutions
A-Z Elektronik GmbH
Authorized Procurement Solutions
Alle Elektronik GmbH
Kepictronics
Supply Digital
UHIMA Technologies
Problanco Electronics
Speed Components Ltd (Excess)
This material provides durability and protection for the FET, making it a reliable choice for various applications.
N-channel FETs are known for their high performance and efficiency, making this product a great option for switching applications.
The built-in diode adds extra functionality to the FET, allowing for more versatile use in different circuits.
Designed specifically for switching applications, this FET offers fast response times and low power consumption.
With a high breakdown voltage, this FET can handle high voltages, making it suitable for power applications.
The rectangular shape of the package allows for easy mounting and installation in various electronic devices.
Through-hole terminals provide secure connections and ease of soldering, ensuring a reliable electrical connection.
Enhancement mode FETs offer high gain and low on-resistance, making them ideal for high-speed switching applications.
With a high pulsed drain current rating, this FET can handle brief power surges without overheating or damage.
The high avalanche energy rating ensures the FET can withstand voltage spikes and surges, increasing its reliability.
With a high drain current rating, this FET can handle continuous current flow without overheating, suitable for power applications.
The three terminals allow for easy connection to external circuits, providing flexibility in circuit design and integration.
With a high power dissipation rating, this FET can handle heat dissipation effectively, ensuring long-term reliability.
The flange mount package style provides easy mounting and secure installation in various electronic systems.
MOSFET technology offers high efficiency and fast switching speeds, making this FET a reliable choice for power applications.
With a high operating temperature range, this FET can withstand high temperatures without performance degradation.
Silicon material provides stability and durability to the FET, ensuring long-term reliability and performance.
The matte tin finish provides corrosion resistance and secure connections, increasing the lifespan of the FET.
With low on-resistance, this FET minimizes power losses and improves efficiency in power applications.
The single terminal position simplifies installation and connection, making this FET easy to integrate into various electronic circuits.
Power Field Effect Transistors (FET) FQP11N40C attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi
Avalanche Energy Rating (EAS):
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (Abs) (ID):
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
JEDEC-95 Code:
JESD-30 Code:
JESD-609 Code:
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Maximum Pulsed Drain Current (IDM):
Qualification:
Sub-Category:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Application:
Transistor Element Material:
FQP11N40C Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Design/Specification - Logo 17/Aug/2017
PCN Assembly/Origin - Mult Dev Asembly Chg 7/May/2020
PCN Packaging - Mult Devices 24/Oct/2017
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
LD1117S33TR
STMicroelectronics
LD1117S33TR by STMicroelectronics is a fixed positive single output LDO regulator with a nominal output voltage of 3.3V and max output current of 1.3A. It has a small outline package style, operates at an adjustable temperature range from 0 to 125°C, and is ideal for applications requiring stable voltage regulation in compact electronic devices.
MMBT2222ALT1G
Rochester Electronics
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .6 A;
BAV99
Sprague Electric
RECTIFIER DIODE; Surface Mount: YES; Maximum Forward Voltage (VF): 1.3 V; Maximum Output Current: .1 A; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 175 Cel;
2N7002
National Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Package Style (Meter): SMALL OUTLINE; Terminal Position: DUAL;
1N4148
Multicomp Pro
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
MICRODIODE ELECTRONICS SHENZHEN CO LTD
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
M85049/85-08W02
Amphenol
CIRCULAR CONN ACCESSORY; Shell Sizes: 8; 9; IEC Conformity: NO; MIL-Connector Accessory Name: BAND LOCK ADAPTER; MIL Conformity: YES; DIN Conformity: NO;
SMBJ18CA
World Products
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
FDV303N
Fairchild Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Transistor Application: SWITCHING; JESD-609 Code: e3;
CSNF651
Honeywell Sensing And Control
CSNF651 by Honeywell Sensing And Control is an industrial-grade analog circuit with 3 terminals. It operates b/w -40 to 85°C, supporting supply voltages from -15V to 15V. Ideal for applications requiring a special shape rectangular package style and through-hole terminal form.
ATMEGA328P-AU
Atmel
MICROCONTROLLER, RISC; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 32; Package Code: TQFP; Package Shape: SQUARE;
DS18B20Z+
Maxim Integrated
TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Shape or Style: RECTANGULAR; Body Width: 3.9 inch; Maximum Supply Voltage: 5.5 V;
Diotec Electronics
C1206C104M5RACTU
KEMET Corporation
KEMET C1206C104M5RACTU is a ceramic capacitor with 0.1uF capacitance and 50V rated DC voltage. It has X7R temperature characteristics, -55 to 125°C operating range, and ±20% tolerance. Ideal for surface mount applications in electronics requiring stable capacitance across temperatures.
2N2222A
Nte Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .8 A; Terminal Form: WIRE;
SSL-LXA228SRC-TR11
Lumex
SSL-LXA228SRC-TR11 by Lumex is a 1.9mm SINGLE COLOR LED with peak wavelength of 660nm and max forward current of 0.03A. Ideal for applications requiring SUPER RED light emission, such as indicator lights in electronic devices due to its clear lens and surface mounting feature.
1N4148WS
Changzhou Starsea Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Rugao Dachang Electronic
Hitano Enterprise
LM358AN
Onsemi
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
IRFR9024PBF
Vishay Siliconix
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 2; JESD-30 Code: R-PSSO-G2; Minimum DS Breakdown Voltage: 60 V;
IRFP460
NXP Semiconductors
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Position: SINGLE; Maximum Drain-Source On Resistance: .27 ohm; JEDEC-95 Code: TO-247;
SI7415DN-T1-GE3
Vishay Intertechnology
SI7415DN-T1-GE3 by Vishay Intertechnology is a P-CHANNEL power FET with a min DS breakdown voltage of 60V. It is used for switching applications and has a max drain current of 3.6A and max power dissipation of 3.8W.
BSC160N15NS5ATMA1
Infineon Technologies
BSC160N15NS5ATMA1 by Infineon is a N-CHANNEL Power FET with 150V DS Breakdown Voltage. Ideal for SWITCHING applications, it features a max IDM of 224A and 0.016 ohm Drain-Source On Resistance. The transistor's METAL-OXIDE SEMICONDUCTOR technology and SILICON material make it reliable for high-power operations.
NDT3055
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; Maximum Drain-Source On Resistance: .1 ohm; Package Body Material: PLASTIC/EPOXY;
IRF3710PBF
IRF3710PBF by Infineon is a N-CHANNEL FET with 100V DS Breakdown Voltage and 180A IDM. Ideal for SWITCHING applications, it has a max power dissipation of 200W and operates in ENHANCEMENT MODE at temperatures ranging from -55 to 175°C.
IRF5210STRLPBF
IRF5210STRLPBF by Infineon is a P-CHANNEL FET with 100V DS Breakdown Voltage, 140A IDM, and 0.06 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 170W.
IRF7493TRPBF-1
Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 1;
AUIRF7759L2TR
International Rectifier
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Maximum Drain Current (ID): 375 A; No. of Elements: 1;
SIR872ADP-T1-GE3
Vishay Intertechnology's SIR872ADP-T1-GE3 is a N-channel FET with 150V DS breakdown voltage and 100A max pulsed drain current. Ideal for switching applications, it features a built-in diode, 0.018 ohm max drain-source resistance, and operates in enhancement mode.
DMP3099L-7
Diodes Incorporated
DMP3099L-7 by Diodes Inc. is a P-channel FET with 30V DS breakdown voltage and 3.8A max drain current, ideal for switching applications. It features a built-in diode, operates in enhancement mode, and has a low on-resistance of 0.065 ohm. Suitable for surface mount designs with small outline package style.
AUIRF7316QTR
AUIRF7316QTR by Infineon is a P-CHANNEL FET with 30V DS Breakdown Voltage, 30A IDM, and 0.058 ohm RDS(on). Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation. Features include 2 elements with built-in diode in a SMALL OUTLINE package.
IRFP460PBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Elements: 1; Maximum Drain-Source On Resistance: .27 ohm; Avalanche Energy Rating (EAS): 960 mJ;
FDS4559-F085
FDS4559-F085 by Onsemi is a N-CHANNEL Power FET for switching applications. It features 60V DS breakdown voltage, 4.5A max drain current, and 0.055 ohm max on resistance. With a small outline package style and gull wing terminals, it operates in enhancement mode at up to 150°C peak temperature.
IRF9530PBF
Vishay Intertechnology's IRF9530PBF is a P-CHANNEL FET with 100V DS Breakdown Voltage and 48A IDM. Ideal for SWITCHING applications, it features a single configuration with built-in diode, 0.3 ohm RDS(on), and 88W max power dissipation.
PSMN4R8-100BSE
Nexperia
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 405 W; Terminal Position: SINGLE; Peak Reflow Temperature (C): 260;
FQP3P50
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 85 W; No. of Terminals: 3; Transistor Application: SWITCHING;
BS170
North American Philips Discrete Products Div
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .83 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Elements: 1;
IRFR4104TRPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 140 W; JESD-30 Code: R-PSSO-G2; Maximum Drain-Source On Resistance: .0055 ohm;
IRF640
Unitrode
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; JEDEC-95 Code: TO-220AB; Terminal Position: SINGLE;
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FQP17P06
FQP17P06 by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage and 68A IDM. Ideal for SWITCHING applications, it features a single configuration with built-in diode and 0.12 ohm Drain-Source On Resistance. Operating in ENHANCEMENT MODE, this transistor has a max power dissipation of 79W and can handle up to 175°C temperature.
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 79 W; Package Body Material: PLASTIC/EPOXY; JESD-30 Code: R-PSFM-T3;
FQP13N50C
FQP13N50C by Fairchild Semiconductor is a N-CHANNEL Power FET with 500V DS Breakdown Voltage and 52A IDM. Ideal for SWITCHING applications, it features a single configuration with built-in diode and operates in ENHANCEMENT MODE. With a max power dissipation of 195W, this transistor has a 0.48 ohm Drain-Source On Resistance and can handle up to 13A Drain Current.
FQP13N50C_F105
Fairchild Semiconductor's FQP13N50C_F105 is a N-CHANNEL Power FET with 500V DS Breakdown Voltage. Ideal for SWITCHING applications, it features 52A IDM and 0.48 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 195W and can withstand temperatures up to 150°C.
FQP13N50C-F105
FQP13N50C-F105 by Onsemi is a N-CHANNEL Power FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 52A and EAS of 860mJ, operating in ENHANCEMENT MODE. The transistor has a RECTANGULAR package shape with THROUGH-HOLE terminals, suitable for high-power FLANGE MOUNT designs.
FQP17P10
FQP17P10 by Onsemi is a P-CHANNEL power field effect transistor (FET) with a min DS breakdown voltage of 100V. It is designed for switching applications and has a max pulsed drain current of 66A. Its package style is flange mount and it operates in enhancement mode.
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Package Body Material: PLASTIC/EPOXY; No. of Terminals: 3;
FQP12N60C
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Qualification: Not Qualified; Package Shape: RECTANGULAR; Minimum DS Breakdown Voltage: 600 V;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 225 W; JESD-609 Code: e3; JESD-30 Code: R-PSFM-T3;
FQP10N60C
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 156 W; Maximum Pulsed Drain Current (IDM): 38 A; Qualification: Not Qualified;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Element Material: SILICON; Package Style (Meter): FLANGE MOUNT; Terminal Form: THROUGH-HOLE;
FQP13N50
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 170 W; Package Body Material: PLASTIC/EPOXY; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 170 W; JEDEC-95 Code: TO-220AB; Terminal Finish: MATTE TIN;
FQP12P20
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 120 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Avalanche Energy Rating (EAS): 810 mJ;
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 120 W; Operating Mode: ENHANCEMENT MODE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
FQP11N40C
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 135 W; Transistor Application: SWITCHING; JESD-30 Code: R-PSFM-T3;
FQP12P10
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 75 W; No. of Terminals: 3; Package Shape: RECTANGULAR;
FQP14N30
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 147 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; JEDEC-95 Code: TO-220AB;
FQP13N06L
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 45 W; JEDEC-95 Code: TO-220AB; Terminal Position: SINGLE;
FQP11N40
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 147 W; Terminal Finish: MATTE TIN; JESD-609 Code: e3;
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