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FJE3303H2

Onsemi

FJE3303H2 by Onsemi

FJE3303H2 by Onsemi is a NPN Power BJT with max. Vce of 400V and max. Ic of 1.5A, ideal for switching applications. Featuring a min. hFE of 14 and fT of 4MHz, this transistor in PLASTIC/EPOXY package is suitable for various electronic designs requiring high voltage switching capabilities.

Median Price

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Lifecycle Status

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2

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1k+

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Digiode

USA . 1,394 parts In-Stock

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Vyrian

USA . 418 parts In-Stock

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Native Components

USA . 146 parts In-Stock

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$1.936

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Northwest PG Solutions

USA . 415 parts In-Stock

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$2.130

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Andel Nordic

Denmark . 734 parts In-Stock

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$37.140

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$25.995

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$25.995

734

$37.140

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$25.995

Component Stockers USA

USA . 550 parts In-Stock

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$99.990

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550

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Kepictronics

USA . 72,000 parts In-Stock

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TANS Electronics

Latvia . 7,085 parts In-Stock

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Problanco Electronics

Mexico . 6,405 parts In-Stock

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Kulean Microsystems

USA . 3,935 parts In-Stock

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Corphita

USA . 2,135 parts In-Stock

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Supply Digital

USA . 955 parts In-Stock

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SupplyDigital Components

Austria . 662 parts In-Stock

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Corohmni

South Africa . 198 parts In-Stock

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UHIMA Technologies

Türkiye . 37 parts In-Stock

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Overview

Power up your projects with the FJE3303H2 by Onsemi! As a leader in the industry, Onsemi delivers top-quality Power Bipolar Junction Transistors that are perfect for switching applications. With a maximum collector-emitter voltage of 400V and a maximum collector current of 1.5A, this NPN transistor is designed to meet your power needs. The FJE3303H2 offers reliable performance and durability, making it a valuable addition to any project. Upgrade your designs with Onsemi's FJE3303H2 and experience the difference in quality and efficiency!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes the transistor lightweight and durable, which is ideal for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this transistor versatile and suitable for a wide range of applications.

Configuration: SINGLE

The single configuration simplifies circuit design and makes the transistor easy to use in various applications.

Transistor Application: SWITCHING

Designed for switching applications, this transistor provides efficient and reliable performance in switching circuits.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy mounting and integration into circuit boards, making it a convenient choice for PCB designs.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and make it easy to solder the transistor onto circuit boards, ensuring stability and reliability in operation.

No. of Terminals: 3

With three terminals, this transistor is easy to connect in circuits and offers flexibility in design and application.

Package Style (Meter): FLANGE MOUNT

The flange mount package style allows for secure and stable mounting, making it suitable for high vibration environments or heavy-duty applications.

Minimum DC Current Gain (hFE): 14

A minimum DC current gain of 14 ensures consistent and reliable amplification in various circuit configurations.

Maximum Collector-Emitter Voltage: 400 V

With a maximum collector-emitter voltage of 400V, this transistor can handle high voltage applications with ease.

Transistor Element Material: SILICON

Silicon transistor elements offer high performance and reliability, making this transistor a durable and long-lasting choice for electronic circuits.

Maximum Collector Current (IC): 1.5 A

With a maximum collector current of 1.5A, this transistor can handle moderate to high current loads in various circuit applications.

Terminal Position: SINGLE

The single terminal position simplifies installation and wiring, making this transistor easy to use in various circuit configurations.

Nominal Transition Frequency (fT): 4 MHz

A nominal transition frequency of 4MHz indicates the speed and performance capabilities of this transistor in high frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) FJE3303H2 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

14

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

FJE3303H2 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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