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FJE3303

Onsemi

FJE3303 by Onsemi

FJE3303 by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 400V, ideal for switching applications. Featuring a min. DC current gain of 5 and max. collector current of 1.5A, it operates at up to 150 °C making it suitable for high-power tasks in various electronic circuits.

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Vyrian

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Digiode

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Native Components

USA . 524 parts In-Stock

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Northwest PG Solutions

USA . 2 parts In-Stock

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SupplyDigital Components

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Kulean Microsystems

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TANS Electronics

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Problanco Electronics

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Supply Digital

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UHIMA Technologies

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Overview

Unlock the power of innovation with the FJE3303 by Onsemi. Crafted with precision and quality, this Power Bipolar Junction Transistor (BJT) offers unparalleled performance in switching applications. Boasting a maximum collector-emitter voltage of 400V and a nominal transition frequency of 4 MHz, this NPN transistor ensures reliability and efficiency. Its single configuration and flange mount package make installation a breeze, while its high DC current gain of 5 guarantees optimal functionality. Elevate your projects with the FJE3303 - where quality meets value for exceptional results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the transistor durable and resistant to heat and moisture, ensuring a long lifespan.

Polarity or Channel Type: NPN

The NPN configuration allows for high efficiency in switching applications, making it suitable for a wide range of electronic circuits.

Configuration: SINGLE

The single configuration simplifies circuit design and makes it easier to integrate into electronic devices.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor provides fast response times and efficient operation in various circuits.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for easy mounting on circuit boards, making it convenient for assembly.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a strong and reliable connection, ensuring stable performance in electronic applications.

No. of Terminals: 3

With 3 terminals, this transistor is easy to install and connect in a circuit, simplifying the overall design process.

Package Style (Meter): FLANGE MOUNT

The flange mount package style provides secure mounting options, making it suitable for high-vibration environments.

Minimum DC Current Gain (hFE): 5

A minimum DC current gain of 5 ensures reliable performance and consistent amplification in various electronic applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high temperatures without compromising performance.

Maximum Collector-Emitter Voltage: 400 V

The high maximum collector-emitter voltage of 400V allows for use in high voltage applications, providing versatility in circuit design.

Transistor Element Material: SILICON

The use of silicon as the transistor element material ensures high performance, stability, and reliability in a variety of electronic circuits.

Maximum Collector Current (IC): 1.5 A

With a maximum collector current of 1.5A, this transistor can handle high currents without overheating, ensuring safe and efficient operation.

Terminal Position: SINGLE

The single terminal position simplifies the connection process and allows for easy integration into electronic circuits.

Nominal Transition Frequency (fT): 4 MHz

A nominal transition frequency of 4 MHz indicates fast switching speeds, making this transistor ideal for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) FJE3303 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

5

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

FJE3303 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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