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FJE3303H1TU

Onsemi

FJE3303H1TU by Onsemi

FJE3303H1TU by Onsemi is a NPN Power BJT with 400V VCEO, 1.5A IC, and 20W Ptot. Ideal for switching applications, it has a hFE of min 8 and operates up to 150°C. The transistor comes in a rectangular package with through-hole terminals suitable for flange mount style.

Median Price

$0.594

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 6,123 parts In-Stock

1+ parts

$0.790

100+ parts

$0.426

1k+ parts

$0.338

10k+ parts

$0.262

6,123

$0.790

$0.426

$0.338

$0.262

DigiKey

USA . 233 parts In-Stock

1+ parts

$1.210

100+ parts

$0.545

1k+ parts

$0.484

10k+ parts

-

233

$1.210

$0.545

$0.484

-

Rochester

USA . 64,762 parts In-Stock

1+ parts

-

100+ parts

$0.355

1k+ parts

$0.294

10k+ parts

$0.263

64,762

-

$0.355

$0.294

$0.263

Verical

USA . 48,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.398

10k+ parts

$0.328

48,000

-

-

$0.398

$0.328

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 839 parts In-Stock

1+ parts

$0.276

100+ parts

-

1k+ parts

-

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839

$0.276

-

-

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Vyrian

USA . 2,023 parts In-Stock

1+ parts

$0.290

100+ parts

-

1k+ parts

-

10k+ parts

-

2,023

$0.290

-

-

-

Bristol Electronics

USA . 1,706 parts In-Stock

1+ parts

-

100+ parts

$0.366

1k+ parts

$0.180

10k+ parts

$0.158

1,706

-

$0.366

$0.180

$0.158

Flip Electronics

USA . 963 parts In-Stock

1+ parts

-

100+ parts

-

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963

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-

-

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Nova Conductors

Japan . 32 parts In-Stock

1+ parts

-

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-

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32

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 29,657 parts In-Stock

1+ parts

$0.246

100+ parts

-

1k+ parts

-

10k+ parts

-

29,657

$0.246

-

-

-

Corphita

USA . 2,456 parts In-Stock

1+ parts

$0.261

100+ parts

-

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-

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2,456

$0.261

-

-

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Corohmni

South Africa . 195 parts In-Stock

1+ parts

$0.290

100+ parts

-

1k+ parts

-

10k+ parts

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195

$0.290

-

-

-

Andel Nordic

Denmark . 5,445 parts In-Stock

1+ parts

$5.441

100+ parts

-

1k+ parts

$5.223

10k+ parts

$5.223

5,445

$5.441

-

$5.223

$5.223

Perfect Parts

USA . 10,506 parts In-Stock

1+ parts

-

100+ parts

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10,506

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Problanco Electronics

Mexico . 7,434 parts In-Stock

1+ parts

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7,434

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-

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TANS Electronics

Latvia . 6,270 parts In-Stock

1+ parts

-

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6,270

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-

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Kulean Microsystems

USA . 5,483 parts In-Stock

1+ parts

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100+ parts

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5,483

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-

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

1+ parts

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5,000

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SupplyDigital Components

Austria . 4,740 parts In-Stock

1+ parts

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100+ parts

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4,740

-

-

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Glotronic Ltd.

UK . 3,900 parts In-Stock

1+ parts

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3,900

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Kepictronics

USA . 1,860 parts In-Stock

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1,860

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Netroflash

USA . 1,000 parts In-Stock

1+ parts

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100+ parts

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1,000

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UHIMA Technologies

Türkiye . 913 parts In-Stock

1+ parts

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913

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Supply Digital

USA . 591 parts In-Stock

1+ parts

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100+ parts

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591

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Overview

Empower your electronic projects with the FJE3303H1TU power bipolar junction transistor by Onsemi. Designed for switching applications, this NPN transistor offers reliable performance and durability. With a maximum collector-emitter voltage of 400V and a maximum operating temperature of 150°C, this transistor provides the power and efficiency you need. Whether you're building audio amplifiers, motor controls, or LED drivers, the FJE3303H1TU is the perfect choice for your next project. Trust in Onsemi's reputation for quality and innovation to bring your creations to life.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material that provides good protection for the transistor.

Polarity or Channel Type: NPN

NPN transistors are commonly used in electronic circuits, making this product versatile and compatible with a wide range of applications.

Configuration: SINGLE

Simplified design with only one transistor in the package, making it easy to use and integrate into circuits.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable and efficient performance.

Maximum Power Dissipation (Abs): 20 W

High power dissipation capability allows the transistor to handle more power without overheating, making it suitable for demanding applications.

Terminal Form: THROUGH-HOLE

Through-hole terminals make it easy to solder the transistor onto a circuit board, ensuring a secure connection.

Maximum Collector-Emitter Voltage: 400 V

High collector-emitter voltage rating makes this transistor suitable for high voltage circuits and applications.

Transistor Element Material: SILICON

Silicon transistors are known for their high performance and reliability, making this product a dependable choice.

Maximum Collector Current (IC): 1.5 A

High collector current rating allows the transistor to handle more current, making it suitable for applications that require high power output.

Nominal Transition Frequency (fT): 4 MHz

High transition frequency allows the transistor to switch on and off quickly, making it ideal for high frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) FJE3303H1TU attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

8

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

FJE3303H1TU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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