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FJE3303H2TU

Onsemi

FJE3303H2TU by Onsemi

FJE3303H2TU by Onsemi is a NPN Power BJT with 400V VCEO, 1.5A IC, and 20W Ptot. Ideal for switching applications, it has a hFE of 14 and operates up to 150°C. The transistor comes in a PLASTIC/EPOXY package with FLANGE MOUNT style suitable for through-hole mounting.

Median Price

$0.481

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 1,836 parts In-Stock

1+ parts

$0.930

100+ parts

$0.488

1k+ parts

$0.374

10k+ parts

$0.342

1,836

$0.930

$0.488

$0.374

$0.342

Rochester

USA . 30,699 parts In-Stock

1+ parts

-

100+ parts

$0.465

1k+ parts

$0.386

10k+ parts

$0.344

30,699

-

$0.465

$0.386

$0.344

DigiKey

USA . 30,301 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.580

10k+ parts

-

30,301

-

-

$0.580

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Verical

USA . 16,104 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.481

10k+ parts

$0.429

16,104

-

-

$0.481

$0.429

Chip1Stop

Japan . 3,120 parts In-Stock

1+ parts

-

100+ parts

-

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$0.391

3,120

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-

$0.391

Distributors (In-Stock)

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Vyrian

USA . 2,515 parts In-Stock

1+ parts

$0.337

100+ parts

-

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2,515

$0.337

-

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Digiode

USA . 1,282 parts In-Stock

1+ parts

$0.362

100+ parts

-

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1,282

$0.362

-

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Flip Electronics

USA . 3,840 parts In-Stock

1+ parts

-

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3,840

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LWI Electronics Inc

India . 24 parts In-Stock

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24

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Distributors (Availability)

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Corohmni

South Africa . 366 parts In-Stock

1+ parts

$0.337

100+ parts

-

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366

$0.337

-

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Corphita

USA . 2,143 parts In-Stock

1+ parts

$0.343

100+ parts

-

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2,143

$0.343

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Northwest PG Solutions

USA . 2,022 parts In-Stock

1+ parts

$2.860

100+ parts

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2,022

$2.860

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QUARKTWIN TECHNOLOGY LTD

USA . 27,276 parts In-Stock

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27,276

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Continental Prestige Electronics

USA . 12,086 parts In-Stock

1+ parts

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100+ parts

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$0.310

10k+ parts

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12,086

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$0.310

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SupplyDigital Components

Austria . 6,091 parts In-Stock

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6,091

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Glotronic Ltd.

UK . 3,900 parts In-Stock

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3,900

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Kepictronics

USA . 3,840 parts In-Stock

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3,840

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Supply Digital

USA . 2,473 parts In-Stock

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Perfect Parts

USA . 2,443 parts In-Stock

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2,443

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Problanco Electronics

Mexico . 2,334 parts In-Stock

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2,334

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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2,000

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Eastek

USA . 1,920 parts In-Stock

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$0.890

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1,920

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$0.890

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TANS Electronics

Latvia . 1,555 parts In-Stock

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1,555

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Metaverse IC Inc.

Canada . 1,388 parts In-Stock

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1,388

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Kulean Microsystems

USA . 1,350 parts In-Stock

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1,350

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Native Components

USA . 740 parts In-Stock

1+ parts

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$2.522

10k+ parts

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740

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$2.522

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UHIMA Technologies

Türkiye . 315 parts In-Stock

1+ parts

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315

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Overview

Looking for a reliable and efficient Power Bipolar Junction Transistor (BJT)? Look no further than the FJE3303H2TU by Onsemi. With a reputation for high-quality products, Onsemi delivers top-notch performance in the field of switching applications. This NPN transistor offers a maximum collector-emitter voltage of 400V and a maximum collector current of 1.5A, making it ideal for a wide range of projects. Trust Onsemi to provide you with the value, benefits, and advantages you need to take your designs to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this product versatile.

Configuration: SINGLE

Simplified circuit design and easy to control, ideal for simple switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring optimal performance in those scenarios.

Maximum Power Dissipation (Abs): 20W

High power dissipation capability allows this transistor to handle moderate power levels without overheating.

Maximum Collector-Emitter Voltage: 400V

With a high voltage rating, this transistor can be used in a wide range of high voltage applications.

Maximum Collector Current (IC): 1.5A

Capable of handling up to 1.5A of current, suitable for many medium-power applications.

Nominal Transition Frequency (fT): 4MHz

High transition frequency allows for fast switching speeds, making this transistor efficient in high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) FJE3303H2TU attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

14

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

FJE3303H2TU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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