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FDMC7200S

Onsemi

FDMC7200S by Onsemi

FDMC7200S by Onsemi is a N-CHANNEL FET with 2 elements and built-in diode, ideal for SWITCHING applications. It features a Max Drain Current of 18A, Max Operating Temperature of 150 °C, and Max Drain-Source On Resistance of 0.022 ohm. This small outline transistor has a square package and operates in ENHANCEMENT MODE.

Median Price

$1.350

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 2,936 parts In-Stock

1+ parts

$1.350

100+ parts

$0.562

1k+ parts

$0.372

10k+ parts

$0.353

2,936

$1.350

$0.562

$0.372

$0.353

DigiKey

USA . 2,213 parts In-Stock

1+ parts

$1.350

100+ parts

$0.562

1k+ parts

$0.399

10k+ parts

$0.310

2,213

$1.350

$0.562

$0.399

$0.310

Verical

USA . 3,000 parts In-Stock

1+ parts

-

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$0.444

3,000

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$0.444

Distributors (In-Stock)

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Digiode

USA . 163 parts In-Stock

1+ parts

$1.168

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163

$1.168

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Vyrian

USA . 2,850 parts In-Stock

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$1.230

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2,850

$1.230

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Flip Electronics

USA . 15,000 parts In-Stock

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15,000

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Connector Distribution Corp

USA . 1,416 parts In-Stock

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1,416

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Right Parts Inc.

USA . 1,416 parts In-Stock

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1,416

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Distributors (Availability)

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Corphita

USA . 1,334 parts In-Stock

1+ parts

$1.107

100+ parts

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1,334

$1.107

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Corohmni

South Africa . 134 parts In-Stock

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$1.230

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134

$1.230

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Native Components

USA . 521 parts In-Stock

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$17.970

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521

$17.970

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Northwest PG Solutions

USA . 1,732 parts In-Stock

1+ parts

$19.767

100+ parts

$17.790

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1,732

$19.767

$17.790

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Metaverse IC Inc.

Canada . 50,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 28,967 parts In-Stock

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28,967

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Kepictronics

USA . 21,000 parts In-Stock

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Authorized Procurement Solutions

USA . 7,500 parts In-Stock

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7,500

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TANS Electronics

Latvia . 3,921 parts In-Stock

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Problanco Electronics

Mexico . 3,914 parts In-Stock

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Perfect Parts

USA . 2,912 parts In-Stock

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2,912

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SupplyDigital Components

Austria . 2,895 parts In-Stock

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Supply Digital

USA . 1,466 parts In-Stock

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Assy Fe

Spain . 1,000 parts In-Stock

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Kulean Microsystems

USA . 745 parts In-Stock

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UHIMA Technologies

Türkiye . 705 parts In-Stock

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705

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GreenTree Electronics

Israel . 50 parts In-Stock

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50

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Overview

Unleash the power of innovation with the FDMC7200S by Onsemi. This small signal field-effect transistor boasts superior quality and performance, thanks to Onsemi's cutting-edge technology and expertise. Ideal for switching applications, this N-channel transistor offers seamless operation and reliability. Its compact design, enhanced mode, and built-in diode make it a versatile choice for various electronic projects. Experience maximum efficiency and durability with the FDMC7200S, the ultimate solution for your electrical needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection for the transistor, making it suitable for various environments.

Polarity or Channel Type: N-CHANNEL

N-channel transistors offer better performance in switching applications compared to P-channel transistors, making this product a good choice for switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in such scenarios.

Surface Mount: YES

Surface mount capability allows for easy integration onto circuit boards, saving space and simplifying assembly.

Minimum DS Breakdown Voltage: 30V

With a minimum breakdown voltage of 30V, this transistor can handle higher voltage levels, increasing its versatility in various applications.

Transistor Element Material: SILICON

Silicon is a common and reliable semiconductor material, ensuring stable and consistent performance of the transistor.

Maximum Drain Current (ID): 7A

With a high maximum drain current of 7A, this transistor can handle high current loads, making it suitable for power applications.

Maximum Drain-Source On Resistance: 0.022 ohm

Low drain-source on resistance results in minimal power loss and efficient performance of the transistor.

Technical Specifications

Small Signal Field Effect Transistors (FET) FDMC7200S attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Case Connection:

DRAIN SOURCE

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

18 A

Maximum Drain Current (ID):

7 A

Maximum Drain-Source On Resistance:

.022 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

30 pF

JESD-30 Code:

S-PDSO-N8

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

NICKEL PALLADIUM GOLD SILVER

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FDMC7200S Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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