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CAT809VTBI-GT3

Onsemi

CAT809VTBI-GT3 by Onsemi

CAT809VTBI-GT3 by Onsemi is a Power Management IC with 2.5V supply voltage, -40 to 85 °C operating temperature range, and 1.22mm seated height. It is ideal for industrial applications requiring low profile, small outline power supply support circuits in a plastic/epoxy package.

Median Price

$0.492

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 3,171 parts In-Stock

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Bristol Electronics

USA . 1,672 parts In-Stock

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$0.492

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$0.367

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$0.341

1,672

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$0.492

$0.367

$0.341

Flip Electronics

USA . 500 parts In-Stock

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500

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Digiode

USA . 405 parts In-Stock

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405

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Native Components

USA . 45 parts In-Stock

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$1.737

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Northwest PG Solutions

USA . 114 parts In-Stock

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$1.911

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AZTECH Wire

Italy . 915 parts In-Stock

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$13.780

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Perfect Parts

USA . 7,172 parts In-Stock

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Problanco Electronics

Mexico . 5,185 parts In-Stock

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Kulean Microsystems

USA . 5,050 parts In-Stock

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TANS Electronics

Latvia . 4,765 parts In-Stock

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Authorized Procurement Solutions

USA . 4,500 parts In-Stock

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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SupplyDigital Components

Austria . 1,958 parts In-Stock

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Kepictronics

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Corphita

USA . 1,262 parts In-Stock

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UHIMA Technologies

Türkiye . 592 parts In-Stock

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GreenTree Electronics

Israel . 452 parts In-Stock

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Microchip USA

USA . 361 parts In-Stock

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Futuretech Components

Singapore . 100 parts In-Stock

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Corohmni

South Africa . 95 parts In-Stock

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Overview

Unleash the power of efficient and reliable power management with the CAT809VTBI-GT3 by Onsemi. Crafted with precision and innovation, this small outline, low profile IC is designed to meet industrial-grade standards, offering a nominal supply voltage of 2.5V for seamless operation. Perfect for a wide range of applications, this power supply support circuit ensures optimal performance while maintaining a compact design. Elevate your projects with the quality and excellence that Onsemi brings to the table, providing customers with superior value and unrivaled benefits. Experience the difference with the CAT809VTBI-GT3 today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy is a durable and lightweight material, making this product suitable for various applications.

Surface Mount: YES

Surface mount technology allows for easy and efficient PCB assembly, saving time and cost.

Nominal Supply Voltage (Vsup): 2.5 V

The nominal supply voltage of 2.5 V is ideal for many electronic devices and ensures efficient power management.

No. of Terminals: 3

Having only 3 terminals simplifies the design and integration of this power management IC.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85 °C, this IC can withstand high temperature environments.

Terminal Finish: NICKEL PALLADIUM GOLD

The nickel palladium gold terminal finish provides excellent conductivity and corrosion resistance.

Minimum Supply Voltage (Vsup): 1.2 V

The minimum supply voltage of 1.2 V allows for operation in low power scenarios.

Temperature Grade: INDUSTRIAL

Being rated for industrial temperature grades ensures reliable performance in harsh operating conditions.

Maximum Supply Current (Isup): 0.015 mA

The low maximum supply current of 0.015 mA helps in maintaining power efficiency.

Technical Specifications

Power Management ICs CAT809VTBI-GT3 attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Additional Features:

RESET THRESHOLD VOLTAGE IS 1.6V

Adjustable Threshold:

NO

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e4

Length:

2.92 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

3

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TO-236

Package Shape:

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

2.5

Qualification:

Not Qualified

Maximum Seated Height:

1.22 mm

Sub-Category:

Power Management Circuits

Maximum Supply Current (Isup):

.015 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.2 V

Nominal Supply Voltage (Vsup):

2.5 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Nominal Threshold Voltage (V):

+1.6V

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

1.3 mm

Trade Compliance

CAT809VTBI-GT3 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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