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BF720T1

Onsemi

BF720T1 by Onsemi

BF720T1 by Onsemi is a NPN BJT with 300V VCEO, 0.1A IC, and 60MHz fT. Ideal for power applications, it has a small outline package and can handle up to 1.5W power dissipation. Suitable for surface mount designs requiring high-speed switching capabilities.

Median Price

$0.386

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 6,693 parts In-Stock

1+ parts

-

100+ parts

$0.343

1k+ parts

$0.285

10k+ parts

$0.254

6,693

-

$0.343

$0.285

$0.254

DigiKey

USA . 6,693 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.430

10k+ parts

-

6,693

-

-

$0.430

-

Verical

USA . 6,693 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.386

10k+ parts

$0.318

6,693

-

-

$0.386

$0.318

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 59 parts In-Stock

1+ parts

$0.268

100+ parts

-

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-

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59

$0.268

-

-

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Vyrian

USA . 347 parts In-Stock

1+ parts

$0.282

100+ parts

-

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347

$0.282

-

-

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Component Electronics Inc.

Canada . 1,412 parts In-Stock

1+ parts

$0.380

100+ parts

$0.290

1k+ parts

$0.250

10k+ parts

-

1,412

$0.380

$0.290

$0.250

-

Bristol Electronics

USA . 2,331 parts In-Stock

1+ parts

$0.750

100+ parts

$0.375

1k+ parts

$0.150

10k+ parts

-

2,331

$0.750

$0.375

$0.150

-

R&J Components

USA . 27,000 parts In-Stock

1+ parts

-

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27,000

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 4,000 parts In-Stock

1+ parts

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4,000

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Prism Electronics

USA . 3,738 parts In-Stock

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3,738

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Microfarads

USA . 1,370 parts In-Stock

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1,370

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North Shore Components

USA . 900 parts In-Stock

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900

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ACDS - Activité Composants Distribution Service

France . 881 parts In-Stock

1+ parts

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881

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Dan-Mar Components

USA . 881 parts In-Stock

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881

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Elcom Components

USA . 345 parts In-Stock

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345

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NAC Semi

USA . 55 parts In-Stock

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55

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Sensible Micro Corp

USA . 15 parts In-Stock

1+ parts

-

100+ parts

$0.322

1k+ parts

$0.297

10k+ parts

-

15

-

$0.322

$0.297

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 6,351 parts In-Stock

1+ parts

$0.240

100+ parts

-

1k+ parts

-

10k+ parts

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6,351

$0.240

-

-

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Corphita

USA . 788 parts In-Stock

1+ parts

$0.254

100+ parts

-

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788

$0.254

-

-

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Corohmni

South Africa . 81 parts In-Stock

1+ parts

$0.282

100+ parts

-

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81

$0.282

-

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Component Stockers USA

USA . 4,820 parts In-Stock

1+ parts

$0.290

100+ parts

$0.270

1k+ parts

$0.250

10k+ parts

-

4,820

$0.290

$0.270

$0.250

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Native Components

USA . 990 parts In-Stock

1+ parts

$29.000

100+ parts

-

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990

$29.000

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Northwest PG Solutions

USA . 1,420 parts In-Stock

1+ parts

$31.900

100+ parts

$28.710

1k+ parts

-

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1,420

$31.900

$28.710

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Kepictronics

USA . 28,099 parts In-Stock

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28,099

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QUARKTWIN TECHNOLOGY LTD

USA . 11,131 parts In-Stock

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11,131

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A-Z Elektronik GmbH

Germany . 7,367 parts In-Stock

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7,367

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TANS Electronics

Latvia . 6,799 parts In-Stock

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6,799

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Continental Prestige Electronics

USA . 6,693 parts In-Stock

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$0.254

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6,693

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$0.254

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Problanco Electronics

Mexico . 6,477 parts In-Stock

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6,477

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Assy Fe

Spain . 5,115 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,911 parts In-Stock

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4,911

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Perfect Parts

USA . 4,187 parts In-Stock

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4,187

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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4,000

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SupplyDigital Components

Austria . 3,130 parts In-Stock

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3,130

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Metaverse IC Inc.

Canada . 2,462 parts In-Stock

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2,462

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UHIMA Technologies

Türkiye . 845 parts In-Stock

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845

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Kulean Microsystems

USA . 54 parts In-Stock

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54

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Overview

Experience superior performance and reliability with the Onsemi BF720T1 Power Bipolar Junction Transistor. Manufactured by a trusted industry leader, this NPN transistor offers unparalleled quality and durability suitable for a variety of applications. Whether you are designing power supplies, amplifiers, or switching circuits, this transistor's small outline package and high DC current gain ensure optimal performance. With a maximum collector-emitter voltage of 300V and a nominal transition frequency of 60MHz, the BF720T1 is the perfect choice for your next project. Upgrade your designs today and discover the value and benefits this transistor brings to your electronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection to the internal components of the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN configuration allows for easy integration into existing circuit designs, making it versatile for different electronic projects.

Configuration: SINGLE

SINGLE configuration simplifies the circuit design and reduces complexity, making it easier to use for designers and hobbyists.

Surface Mount: YES

Surface mount capability enables easy and efficient placement on circuit boards, saving space and reducing assembly time.

Maximum Power Dissipation (Abs): 1.5 W

High power dissipation rating allows the transistor to handle high-power applications without overheating, ensuring reliability.

Maximum Operating Temperature: 150 °C

High maximum operating temperature ensures stability and performance in a wide range of environments, suitable for industrial applications.

Maximum Collector-Emitter Voltage: 300 V

High collector-emitter voltage rating allows the transistor to withstand high voltage applications, increasing its versatility.

Nominal Transition Frequency (fT): 60 MHz

High transition frequency enables fast switching speeds, making it suitable for high-frequency applications such as amplifiers and oscillators.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BF720T1 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

300 V

Configuration:

Minimum DC Current Gain (hFE):

50

JEDEC-95 Code:

TO-261AA

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BF720T1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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