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BF720T1G

Onsemi

BF720T1G by Onsemi

BF720T1G by Onsemi is a NPN BJT with 300V VCEO, 0.1A IC, and 60MHz fT. Ideal for power applications, it comes in a small outline package with Gull Wing terminals for surface mounting. With a max operating temp of 150°C, it offers high DC current gain and low power dissipation.

Median Price

$0.262

Lifecycle Status

Suppliers In-Stock

32

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 105,085 parts In-Stock

1+ parts

$0.204

100+ parts

$0.196

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$0.188

10k+ parts

$0.150

105,085

$0.204

$0.196

$0.188

$0.150

Arrow

USA . 5,865 parts In-Stock

1+ parts

$0.389

100+ parts

$0.305

1k+ parts

$0.221

10k+ parts

$0.193

5,865

$0.389

$0.305

$0.221

$0.193

Mouser Electronics

USA . 9,278 parts In-Stock

1+ parts

$0.730

100+ parts

$0.290

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$0.198

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9,278

$0.730

$0.290

$0.198

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DigiKey

USA . 12,066 parts In-Stock

1+ parts

$0.770

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$0.307

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$0.198

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$0.179

12,066

$0.770

$0.307

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$0.179

Farnell

UK . 106,437 parts In-Stock

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$0.219

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$0.133

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Element14

Singapore . 106,337 parts In-Stock

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$0.413

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$0.279

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$0.274

106,337

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Avnet

USA . 11,000 parts In-Stock

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Flip Electronics (Authorized)

USA . 8,000 parts In-Stock

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Chip1Stop

Japan . 6,005 parts In-Stock

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$0.172

1k+ parts

$0.157

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$0.144

6,005

-

$0.172

$0.157

$0.144

Future Electronics

Canada . 6,000 parts In-Stock

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$0.137

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$0.133

6,000

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Verical

USA . 5,865 parts In-Stock

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$0.305

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$0.221

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$0.193

5,865

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$0.305

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$0.193

Master Electronics

USA . 5,000 parts In-Stock

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$0.136

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$0.129

5,000

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$0.129

Distributors (In-Stock)

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Voyager Components

USA . 2,000 parts In-Stock

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$0.123

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$0.123

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$0.123

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$0.123

2,000

$0.123

$0.123

$0.123

$0.123

Vyrian

USA . 679 parts In-Stock

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$0.172

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679

$0.172

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Digiode

USA . 647 parts In-Stock

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$0.345

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647

$0.345

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Bristol Electronics

USA . 5,268 parts In-Stock

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$0.600

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$0.300

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$0.120

10k+ parts

$0.090

5,268

$0.600

$0.300

$0.120

$0.090

TME

Poland . 412 parts In-Stock

1+ parts

$0.690

100+ parts

$0.279

1k+ parts

$0.178

10k+ parts

$0.147

412

$0.690

$0.279

$0.178

$0.147

IBS Electronics

USA . 73,000 parts In-Stock

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$0.191

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$0.181

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$0.181

NAC Semi

USA . 27,000 parts In-Stock

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$0.274

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Chip Stock

USA . 14,243 parts In-Stock

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ComSIT Distribution GmbH

Germany . 3,000 parts In-Stock

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Cyclops Electronics Ltd

UK . 2,016 parts In-Stock

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Flip Electronics

USA . 2,000 parts In-Stock

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Component Sense

UK . 1,693 parts In-Stock

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Micros

Poland . 1,000 parts In-Stock

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$0.143

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Partservice

France . 1,000 parts In-Stock

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$0.142

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$0.142

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$0.142

Micros sp.j. W. Kędra i J. Lic

Poland . 1,000 parts In-Stock

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$0.153

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$0.153

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$0.153

Corel Iberica Componentes, S.L.

Spain . 650 parts In-Stock

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650

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Microfarads

USA . 421 parts In-Stock

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421

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EMSNET

USA . 240 parts In-Stock

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PC Components Company LLC

USA . 95 parts In-Stock

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95

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Prism Electronics

USA . 59 parts In-Stock

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59

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Distributors (Availability)

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Corohmni

South Africa . 336 parts In-Stock

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$0.123

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336

$0.123

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Corphita

USA . 1,595 parts In-Stock

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$0.327

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$0.327

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Continental Prestige Electronics

USA . 112,300 parts In-Stock

1+ parts

$0.375

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$0.206

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$0.100

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$0.093

112,300

$0.375

$0.206

$0.100

$0.093

Native Components

USA . 257 parts In-Stock

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$5.980

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257

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Metaverse IC Inc.

Canada . 306,000 parts In-Stock

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Perfect Parts

USA . 107,836 parts In-Stock

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GreenTree Electronics

Israel . 78,000 parts In-Stock

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Eastek

USA . 57,000 parts In-Stock

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$0.159

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Authorized Procurement Solutions

USA . 31,000 parts In-Stock

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Kepictronics

USA . 27,860 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 24,731 parts In-Stock

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TANS Electronics

Latvia . 7,993 parts In-Stock

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Kulean Microsystems

USA . 7,126 parts In-Stock

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Lixinc

USA . 5,605 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,067 parts In-Stock

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,378 parts In-Stock

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Problanco Electronics

Mexico . 2,945 parts In-Stock

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Standard Data Resources (Excess)

USA . 2,000 parts In-Stock

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SupplyDigital Components

Austria . 1,628 parts In-Stock

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1,628

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Northwest PG Solutions

USA . 1,523 parts In-Stock

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$5.860

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1,523

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UHIMA Technologies

Türkiye . 91 parts In-Stock

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91

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Amble Industries

USA . 30 parts In-Stock

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30

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Overview

Discover the power and reliability of the BF720T1G by Onsemi! This high-quality Power Bipolar Junction Transistor (BJT) offers customers exceptional performance and value. Manufactured by Onsemi, a trusted leader in semiconductor technology, this NPN transistor is perfect for a variety of applications. From amplifiers to switching circuits, the BF720T1G delivers top-notch performance with a maximum power dissipation of 1.5W and a maximum collector-emitter voltage of 300V. Trust Onsemi to provide innovative solutions for your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material ensures good insulation and protection for the transistor, making it durable and reliable.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, making this product versatile for various circuit designs.

Configuration: SINGLE

The single configuration simplifies circuit design and assembly, making it easier to integrate this transistor into electronic devices.

Surface Mount: YES

The surface mount feature allows for easy and efficient PCB assembly, saving time and cost during production.

Maximum Power Dissipation (Abs): 1.5 W

With a high maximum power dissipation of 1.5W, this transistor can withstand and dissipate heat effectively, ensuring stable performance under demanding conditions.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient placement and utilization of space on the PCB, optimizing the overall design layout.

Minimum DC Current Gain (hFE): 50

The minimum DC current gain of 50 ensures consistent and reliable amplification of the input signal, making this transistor suitable for various signal processing applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150°C, this transistor can withstand elevated temperatures without compromising its performance, ideal for applications that require extended temperature ranges.

Maximum Collector-Emitter Voltage: 300 V

The high maximum collector-emitter voltage rating of 300V allows for handling higher voltages safely, making this transistor suitable for power control and switching applications.

Transistor Element Material: SILICON

Silicon transistors offer good performance, reliability, and efficiency, making this product a reliable choice for electronic circuits.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1A, this transistor can handle moderate current levels, suitable for low to medium power applications.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides good solderability and conductivity, ensuring secure connections and reliable performance in various operating environments.

Nominal Transition Frequency (fT): 60 MHz

The high nominal transition frequency of 60MHz indicates the speed at which this transistor can switch and amplify signals, making it suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BF720T1G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

300 V

Configuration:

Minimum DC Current Gain (hFE):

50

JEDEC-95 Code:

TO-261AA

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BF720T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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