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BF723

Diodes Incorporated

BF723 by Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .05 A; Qualification: Not Qualified;

Median Price

$0.237

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Voyager Components

USA . 137 parts In-Stock

1+ parts

$0.237

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$0.237

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$0.237

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$0.237

137

$0.237

$0.237

$0.237

$0.237

Digiode

USA . 4,114 parts In-Stock

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Vyrian

USA . 3,432 parts In-Stock

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Anansix

USA . 2,848 parts In-Stock

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ComSIT Distribution GmbH

Germany . 2,740 parts In-Stock

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PC Components Company LLC

USA . 438 parts In-Stock

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438

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Martec Srl

Italy . 400 parts In-Stock

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R&J Components

USA . 236 parts In-Stock

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Bristol Electronics

USA . 148 parts In-Stock

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ECAB

Sweden . 32 parts In-Stock

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Distributors (Availability)

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AZTECH Wire

Italy . 8,316 parts In-Stock

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$0.240

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$0.240

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Modulus Dynamics

Lithuania . 3,378 parts In-Stock

1+ parts

$1.112

100+ parts

$1.068

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$1.023

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3,378

$1.112

$1.068

$1.023

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One Stop Electronics

USA . 1,056 parts In-Stock

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$9.050

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1,056

$9.050

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Metaverse IC Inc.

Canada . 306,000 parts In-Stock

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Kepictronics

USA . 27,860 parts In-Stock

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UNI Independent Distributors

Spain . 8,334 parts In-Stock

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Authorized Procurement Solutions

USA . 7,000 parts In-Stock

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Northwest PG Solutions

USA . 5,097 parts In-Stock

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Assy Fe

Spain . 4,000 parts In-Stock

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Corphita

USA . 3,629 parts In-Stock

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3,629

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Native Components

USA . 1,976 parts In-Stock

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Supply Digital

USA . 1,041 parts In-Stock

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1,041

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Technical Specifications

Power Bipolar Junction Transistors (BJT) BF723 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

250 V

Configuration:

Minimum DC Current Gain (hFE):

50

JESD-30 Code:

R-PDSO-G4

No. of Elements:

1

No. of Terminals:

4

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BF723 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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