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BF720T3

Onsemi

BF720T3 by Onsemi

BF720T3 by Onsemi is a NPN BJT with 300V VCEO, 1.5W Ptot, and 60MHz fT. Ideal for applications requiring small outline SMT transistors like power supplies and amplifiers due to its high hFE of 50 and low IC of 0.1A.

Median Price

$0.281

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Bristol Electronics

USA . 4,985 parts In-Stock

1+ parts

-

100+ parts

$0.281

1k+ parts

$0.113

10k+ parts

$0.084

4,985

-

$0.281

$0.113

$0.084

Resion

USA . 3,935 parts In-Stock

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3,935

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Digiode

USA . 1,699 parts In-Stock

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1,699

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Vyrian

USA . 328 parts In-Stock

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328

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Distributors (Availability)

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Native Components

USA . 457 parts In-Stock

1+ parts

$0.231

100+ parts

-

1k+ parts

-

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$0.222

457

$0.231

-

-

$0.222

Northwest PG Solutions

USA . 2,050 parts In-Stock

1+ parts

$0.254

100+ parts

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$0.224

2,050

$0.254

-

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$0.224

Ampacity Inc.

Singapore . 623 parts In-Stock

1+ parts

$1.050

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623

$1.050

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Perfect Parts

USA . 41,440 parts In-Stock

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41,440

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Kulean Microsystems

USA . 4,366 parts In-Stock

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Kepictronics

USA . 3,920 parts In-Stock

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3,920

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Metaverse IC Inc.

Canada . 3,420 parts In-Stock

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Problanco Electronics

Mexico . 2,186 parts In-Stock

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TANS Electronics

Latvia . 1,356 parts In-Stock

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1,356

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SupplyDigital Components

Austria . 1,173 parts In-Stock

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1,173

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UHIMA Technologies

Türkiye . 690 parts In-Stock

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690

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Corphita

USA . 509 parts In-Stock

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Corohmni

South Africa . 303 parts In-Stock

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Overview

Discover the superior performance and reliability of the BF720T3 Power Bipolar Junction Transistor by Onsemi. With its NPN configuration and small outline package style, this transistor offers exceptional quality and versatility for a wide range of applications. Whether you're looking to enhance power management in your electronics or optimize circuitry design, this product delivers maximum power dissipation, high collector-emitter voltage, and excellent DC current gain. Trust Onsemi's reputation for innovation and cutting-edge technology, and experience the value and benefits that the BF720T3 brings to your projects. Elevate your designs with this top-of-the-line transistor today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring reliable performance over time.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this product versatile for various applications.

Configuration: SINGLE

Simplified circuit design and ease of integration into a system.

Surface Mount: YES

Facilitates easy and efficient PCB assembly, saving time and cost.

Maximum Power Dissipation (Abs): 1.5 W

Able to handle moderate power levels, suitable for a range of applications without overheating.

Maximum Collector-Emitter Voltage: 300 V

Can withstand high voltages, making it suitable for use in high-power applications.

Nominal Transition Frequency (fT): 60 MHz

Offers high frequency response, ideal for applications requiring fast switching speeds.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BF720T3 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

300 V

Configuration:

Minimum DC Current Gain (hFE):

50

JEDEC-95 Code:

TO-261AA

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BF720T3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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