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BCW70LT1G

Onsemi

BCW70LT1G by Onsemi

BCW70LT1G by Onsemi is a PNP BJT transistor with 215 min hFE, 45V VCEO, and 0.1A IC. Ideal for small signal applications in electronics due to its compact SMALL OUTLINE package and GULL WING terminals. With an operating temperature of up to 150°C, it's suitable for various surface mount designs.

Median Price

$0.035

Lifecycle Status

Suppliers In-Stock

30

In-Stock Inventory

1k+

Distributors (Authorized)

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Arrow

USA . 35,191 parts In-Stock

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$0.065

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$0.038

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$0.035

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35,191

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$0.038

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$0.034

Mouser Electronics

USA . 10,420 parts In-Stock

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$0.180

100+ parts

$0.068

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$0.043

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$0.068

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$0.032

Newark

USA . 66,300 parts In-Stock

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Rochester

USA . 37,756 parts In-Stock

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Verical

USA . 35,191 parts In-Stock

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EBV Elektronik

Germany . 9,000 parts In-Stock

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Chip1Stop

Japan . 8,850 parts In-Stock

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DigiKey

USA . 4,257 parts In-Stock

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Farnell

UK . 3,755 parts In-Stock

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Element14

Singapore . 3,755 parts In-Stock

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$0.087

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Bürklin Elektronik

Germany . 1,566 parts In-Stock

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Digiode

USA . 819 parts In-Stock

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Nova Conductors

Japan . 700 parts In-Stock

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TME

Poland . 342 parts In-Stock

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$0.160

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$0.062

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$0.038

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$0.029

342

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$0.062

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$0.029

Chip Stock

USA . 77,000 parts In-Stock

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Vyrian

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NAC Semi

USA . 21,000 parts In-Stock

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IBS Electronics

USA . 18,000 parts In-Stock

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Flip Electronics

USA . 15,356 parts In-Stock

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LWI Electronics Inc

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Lakeland Logistics Inc

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Bristol Electronics

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ACDS - Activité Composants Distribution Service

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ComSIT Distribution GmbH

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LIBRA Elektronik GmbH

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Cyclops Electronics Ltd

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Lighthouse Electronics, Inc.

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Elcom Components

USA . 705 parts In-Stock

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Rebound Electronics

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Ampacity Inc.

Singapore . 24,804 parts In-Stock

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Corphita

USA . 1,212 parts In-Stock

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Corohmni

South Africa . 143 parts In-Stock

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Aranea Global

USA . 2,000 parts In-Stock

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Argo Parts USA

USA . 876 parts In-Stock

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Perfect Parts

USA . 188,190 parts In-Stock

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Eastek

USA . 48,000 parts In-Stock

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Continental Prestige Electronics

USA . 37,769 parts In-Stock

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Infinite Electronics LLP (Excess)

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Authorized Procurement Solutions

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Glotronic Ltd.

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QUARKTWIN TECHNOLOGY LTD

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Lixinc

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Kepictronics

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Cyclops Electronics Ltd (Excess)

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SupplyDigital Components

Austria . 4,966 parts In-Stock

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Formix International (Excess)

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Kulean Microsystems

USA . 3,695 parts In-Stock

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GreenTree Electronics

Israel . 3,000 parts In-Stock

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TANS Electronics

Latvia . 2,705 parts In-Stock

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UHIMA Technologies

Türkiye . 917 parts In-Stock

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Futuretech Components

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Problanco Electronics

Mexico . 580 parts In-Stock

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Overview

Enhance your electronic projects with the BCW70LT1G by Onsemi, a top-quality Small Signal Bipolar Junction Transistor that offers exceptional performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this PNP transistor is perfect for a wide range of applications. With a maximum collector-emitter voltage of 45V and a minimum DC current gain of 215, this transistor delivers impressive results while being easy to install thanks to its Gull Wing terminals. Trust Onsemi's expertise and choose the BCW70LT1G for all your small signal transistor needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor lightweight and durable, making it suitable for portable devices.

Polarity or Channel Type: PNP

PNP transistors are often used in high-side switching circuits, making this product a good choice for applications requiring this configuration.

Configuration: SINGLE

The single configuration simplifies circuit design and makes it easier to integrate into a variety of applications.

Surface Mount: YES

Surface mount compatibility allows for easy PCB assembly and saves space compared to through-hole components.

Package Shape: RECTANGULAR

The rectangular package shape provides a standardized form factor that is easy to handle and incorporate into circuit designs.

Maximum Power Dissipation (Abs): 0.225 W

With a maximum power dissipation of 0.225 W, this transistor can handle moderate power levels without overheating.

Minimum DC Current Gain (hFE): 215

A high minimum DC current gain ensures consistent and reliable amplification in various operating conditions.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C allows for operation in harsh environments without performance degradation.

Maximum Collector-Emitter Voltage: 45 V

The high maximum collector-emitter voltage rating of 45 V makes this transistor suitable for a wide range of voltage levels in circuits.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1 A, this transistor can handle moderate current loads in various applications.

Terminal Finish: Matte Tin (Sn) - annealed

Matte tin terminal finish provides good solderability and ensures a reliable electrical connection in the circuit.

Peak Reflow Temperature °C: 260

The high peak reflow temperature of 260°C makes this transistor suitable for lead-free soldering processes.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCW70LT1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

215

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Element Material:

SILICON

Trade Compliance

BCW70LT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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