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BCW72LT1G

Onsemi

BCW72LT1G by Onsemi

BCW72LT1G by Onsemi is a NPN BJT transistor for switching applications. It has a max collector-emitter voltage of 45V, max collector current of 0.1A, and min DC current gain of 200. With a package style of small outline, it is ideal for surface mount designs requiring high transition frequency up to 300MHz.

Median Price

$0.028

Lifecycle Status

Suppliers In-Stock

33

In-Stock Inventory

1k+

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Newark

USA . 78,072 parts In-Stock

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$0.007

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Mouser Electronics

USA . 27,564 parts In-Stock

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$0.160

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$0.061

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$0.061

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$0.026

DigiKey

USA . 20,344 parts In-Stock

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Rochester

USA . 2,308,647 parts In-Stock

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Farnell

UK . 2,308,647 parts In-Stock

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Verical

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Future Electronics

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Avnet

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Arrow

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Element14

Singapore . 10,198 parts In-Stock

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Chip1Stop

Japan . 4,796 parts In-Stock

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Digiode

USA . 969 parts In-Stock

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Greenchips

USA . 166 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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TME

Poland . 530 parts In-Stock

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530

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IBS Electronics

USA . 2,070,000 parts In-Stock

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NAC Semi

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Vyrian

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Chip Stock

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LIBRA Elektronik GmbH

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ComSIT Distribution GmbH

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ComSIT USA

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Cyclops Electronics Ltd

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Diverse Electronics

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Corel Iberica Componentes, S.L.

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Semtec, LLC

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Martec Srl

Italy . 1,564 parts In-Stock

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LWI Electronics Inc

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Ampacity Inc.

Singapore . 523,655 parts In-Stock

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Corphita

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Component Stockers USA

USA . 1,852,412 parts In-Stock

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Semicontronic

India . 574,524 parts In-Stock

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Argo Parts USA

USA . 123 parts In-Stock

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Bastille Electronics

Australia . 10 parts In-Stock

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Advanced Electronics

New Zealand . 37 parts In-Stock

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$0.345

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$0.311

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Corohmni

South Africa . 505 parts In-Stock

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Perfect Parts

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Continental Prestige Electronics

USA . 2,308,647 parts In-Stock

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Authorized Procurement Solutions

USA . 804,000 parts In-Stock

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GreenTree Electronics

Israel . 381,000 parts In-Stock

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Kepictronics

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QUARKTWIN TECHNOLOGY LTD

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Lixinc

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Kulean Microsystems

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A-Z Elektronik GmbH

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SupplyDigital Components

Austria . 6,231 parts In-Stock

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Eastek

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Problanco Electronics

Mexico . 5,169 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,765 parts In-Stock

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TANS Electronics

Latvia . 4,397 parts In-Stock

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Metaverse IC Inc.

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UHIMA Technologies

Türkiye . 264 parts In-Stock

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Overview

Enhance your electronic projects with the BCW72LT1G by Onsemi, a high-quality Small Signal Bipolar Junction Transistor perfect for switching applications. Manufactured by Onsemi, a trusted name in the industry, this NPN transistor offers reliability and efficiency. With a maximum collector-emitter voltage of 45V and a minimum DC current gain of 200, this transistor provides excellent performance. Whether you're working on hobbyist projects or professional designs, the BCW72LT1G ensures seamless operation and precise functionality. Upgrade your circuits today with this versatile component and experience unparalleled value and benefits.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications and environments.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering reliability and efficiency.

Configuration: SINGLE

Simplified design and straightforward operation for easy integration into circuits.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in such scenarios.

Surface Mount: YES

Convenient surface mount package for easy and compact PCB assembly.

Package Shape: RECTANGULAR

Space-saving design for efficient use of board space in applications.

Terminal Form: GULL WING

Gull wing terminals provide reliable solder connections for secure mounting on the PCB.

Maximum Power Dissipation (Abs): 0.225 W

Efficient power dissipation capability, suitable for low to moderate power applications.

Minimum DC Current Gain (hFE): 200

High DC current gain ensures stable and predictable performance in amplification circuits.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows for usage in various environments without compromising performance.

Maximum Collector-Emitter Voltage: 45 V

Provides higher voltage handling capability, increasing the versatility of the transistor.

Transistor Element Material: SILICON

Silicon material ensures high-performance and reliability in various circuit applications.

Maximum Collector Current (IC): 0.1 A

Sufficient collector current rating for low to moderate current applications.

Terminal Finish: Matte Tin (Sn) - annealed

Matte tin finish provides good solderability and conductivity for secure connections.

Terminal Position: DUAL

Dual terminal position for flexible mounting options and compatibility with different circuit layouts.

Maximum Time At Peak Reflow Temperature (s): 40

Allows for reliable solder reflow process within specified time limits for quality assembly.

Peak Reflow Temperature °C: 260

High peak reflow temperature for effective soldering and robust connections.

Nominal Transition Frequency (fT): 300 MHz

High transition frequency for fast switching speeds and efficient performance in high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCW72LT1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

200

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BCW72LT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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