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BBL4001

Onsemi

BBL4001 by Onsemi

The Onsemi BBL4001 is a N-CHANNEL Power FET with 74A ID and 35W power dissipation. Ideal for high-power applications, it operates up to 150 °C with METAL-OXIDE SEMICONDUCTOR tech. Suitable for various electronic devices requiring efficient power management.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,063 parts In-Stock

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Vyrian

USA . 1,711 parts In-Stock

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Metaverse IC Inc.

Canada . 50,000 parts In-Stock

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Kepictronics

USA . 34,333 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 22,160 parts In-Stock

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SupplyDigital Components

Austria . 6,223 parts In-Stock

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CPlus Electronics

USA . 6,000 parts In-Stock

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Kulean Microsystems

USA . 2,892 parts In-Stock

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Northwest PG Solutions

USA . 1,342 parts In-Stock

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Corphita

USA . 1,073 parts In-Stock

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TANS Electronics

Latvia . 997 parts In-Stock

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UHIMA Technologies

Türkiye . 786 parts In-Stock

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Native Components

USA . 375 parts In-Stock

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Corohmni

South Africa . 340 parts In-Stock

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Problanco Electronics

Mexico . 31 parts In-Stock

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Overview

Unlock the full potential of your power systems with the BBL4001 by Onsemi. As a leading manufacturer in the industry, Onsemi's Power Field Effect Transistors (FET) are known for their exceptional quality and reliability. The BBL4001, a N-CHANNEL single configuration FET, boasts a maximum drain current of 74 A and a power dissipation of 35 W. With its cutting-edge METAL-OXIDE SEMICONDUCTOR technology and high operating temperature of 150 °C, this transistor is ideal for a wide range of applications. Experience the value, benefits, and advantages that the BBL4001 brings to your projects today.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL FETs are known for their high efficiency and low ON resistance, making them ideal for applications requiring high power handling.

Configuration: SINGLE

SINGLE configuration simplifies the circuit design and ensures easier control and monitoring of the transistor.

Maximum Drain Current (Abs) (ID): 74 A

With a maximum drain current of 74 A, this FET can handle high current loads without overheating or getting damaged.

Maximum Power Dissipation (Abs): 35 W

The high maximum power dissipation of 35 W allows the FET to handle high power applications with ease, ensuring reliable performance under heavy loads.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

METAL-OXIDE SEMICONDUCTOR technology provides excellent switching speed and low leakage current, making the FET suitable for a wide range of applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this FET can operate in high temperature environments without compromising its performance or reliability.

Terminal Finish: Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

The use of multiple terminal finishes enhances the durability and conductivity of the FET, ensuring reliable connections and long-term performance.

Technical Specifications

Power Field Effect Transistors (FET) BBL4001 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

74 A

Maximum Drain Current (ID):

74 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Finish:

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

Trade Compliance

BBL4001 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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