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ASM3I1819NG-08-SR

Onsemi

ASM3I1819NG-08-SR by Onsemi

ASM3I1819NG-08-SR by Onsemi is a Clock Generator with 40 MHz output frequency, suitable for industrial applications. It features CMOS technology, operates b/w -40 to 85 °C, and has a small outline package style. Ideal for video peripheral ICs requiring a 3.3 V supply voltage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 2,005 parts In-Stock

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2,005

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Vyrian

USA . 156 parts In-Stock

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156

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Problanco Electronics

Mexico . 7,500 parts In-Stock

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7,500

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Kulean Microsystems

USA . 6,251 parts In-Stock

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TANS Electronics

Latvia . 5,930 parts In-Stock

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5,930

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SupplyDigital Components

Austria . 5,255 parts In-Stock

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Native Components

USA . 748 parts In-Stock

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748

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Northwest PG Solutions

USA . 637 parts In-Stock

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UHIMA Technologies

Türkiye . 595 parts In-Stock

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595

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Corphita

USA . 447 parts In-Stock

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Corohmni

South Africa . 68 parts In-Stock

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Overview

Enhance your electronic projects with the ASM3I1819NG-08-SR clock generator by Onsemi. Designed with precision and reliability in mind, this clock generator offers unparalleled performance for a wide range of applications. With its compact size and industrial-grade temperature tolerance, this clock generator is perfect for high-demand environments. Trust Onsemi's years of expertise in semiconductor manufacturing to deliver a product that exceeds expectations. Upgrade your designs today with the ASM3I1819NG-08-SR and experience the difference in quality and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material is lightweight and durable, making the clock generator easy to handle and resistant to damage.

Surface Mount: YES

Surface mount technology allows for easy and convenient installation on circuit boards, saving space and simplifying the assembly process.

Maximum Output Clock Frequency: 40 MHz

High maximum output clock frequency of 40 MHz ensures reliable and efficient performance in various applications.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the clock generator energy-efficient and reliable for long-term use.

Nominal Supply Voltage: 3.3 V

Operates at a nominal supply voltage of 3.3V, which is a common standard in many electronic devices, ensuring compatibility and ease of integration.

Technical Specifications

Clock Generators ASM3I1819NG-08-SR attributes and parameters. Explore more Clock Generators devices from Onsemi

Specs

JESD-30 Code:

R-PDSO-G8

Length:

4.9 mm

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Clock Frequency:

40 MHz

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Nominal Primary Clock/Crystal Frequency:

40 MHz

Maximum Seated Height:

1.75 mm

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

3.9 mm

Peripheral IC Type:

Trade Compliance

ASM3I1819NG-08-SR Peripheral ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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