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2N5061G

Onsemi

2N5061G by Onsemi

2N5061G by Onsemi is a SCR with max DC gate trigger current of 0.2mA, non-repetitive peak on-state current of 10A, and max on-state current of 0.51A. It is used in applications requiring reliable switching capabilities at temperatures ranging from -40 to 110 °C.

Median Price

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Lifecycle Status

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Vyrian

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ACDS - Activité Composants Distribution Service

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Digiode

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J2 Sourcing AB

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AZTECH Wire

Italy . 791 parts In-Stock

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Component Stockers USA

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Native Components

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$206.695

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Northwest PG Solutions

USA . 2,158 parts In-Stock

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Perfect Parts

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Lixinc

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Kulean Microsystems

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A-Z Elektronik GmbH

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TANS Electronics

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SupplyDigital Components

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Glotronic Ltd.

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Problanco Electronics

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UHIMA Technologies

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Corphita

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Corohmni

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Overview

Unlock the power of reliable and efficient electronics with the 2N5061G by Onsemi. As a leading manufacturer in the industry, Onsemi guarantees top-notch quality and performance in all their products, including this Silicon Controlled Rectifier (SCR). Ideal for a wide range of applications, the 2N5061G offers customers unmatched value, benefits, and advantages. Experience seamless operation and peace of mind knowing that you have a trusted product at your disposal. Elevate your projects with the 2N5061G by Onsemi today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides good insulation and protection for the components inside, ensuring reliable performance.

Maximum DC Gate Trigger Current: 0.2 mA

Low gate trigger current allows for easy control of the SCR, making it suitable for a wide range of applications.

Configuration: SINGLE

SINGLE configuration simplifies the circuit design and makes installation easier.

Repetitive Peak On-state Current: 10 A

High on-state current capability enables the SCR to handle larger loads and provide robust performance.

Maximum On-state Current: 0.51 A

The SCR can handle high current levels safely, ensuring reliable operation in demanding conditions.

Repetitive Peak Reverse Voltage: 60 V

The SCR can withstand reverse voltage up to 60V, providing protection against reverse polarity.

Maximum Operating Temperature: 110 °C

High operating temperature range allows the SCR to perform well in challenging environments.

Maximum RMS On-state Current: 0.8 A

High RMS on-state current rating ensures the SCR can handle continuous current flow without overheating.

Maximum DC Gate Trigger Voltage: 1.2 V

Low gate trigger voltage allows for efficient control of the SCR, minimizing power losses and improving overall performance.

Repetitive Peak Off-state Voltage: 60 V

The SCR can handle off-state voltages up to 60V, providing protection against voltage spikes and transients.

Maximum Holding Current: 10 mA

The SCR can maintain a stable state with holding current, ensuring reliable performance in various applications.

Nominal Circuit Commutated Turn-off Time: 10 us

Fast turn-off time allows for efficient switching and control of the SCR, improving overall performance and response time.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N5061G attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Onsemi

Specs

Nominal Circuit Commutated Turn-off Time:

10 us

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

30 V/us

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

1.2 V

Maximum Holding Current:

10 mA

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

Non Repetitive Peak On-state Current:

10 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

.51 A

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum RMS On-state Current:

.8 A

Repetitive Peak Off-state Voltage:

60 V

Repetitive Peak Reverse Voltage:

60 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

2N5061G Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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