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2N5060RLRAG

Onsemi

2N5060RLRAG by Onsemi

2N5060RLRAG by Onsemi is a single SCR with max. DC gate trigger current of 0.2 mA, non-repetitive peak on-state current of 10 A, and max. RMS on-state current of 0.8 A. It is used in applications requiring precise control over power flow and voltage regulation in electronic circuits.

Median Price

$0.190

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 10 parts In-Stock

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$0.999

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10

$0.999

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DigiKey

USA . 58,185 parts In-Stock

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$0.170

58,185

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$0.170

Rochester

USA . 54,409 parts In-Stock

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$0.198

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$0.164

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$0.147

54,409

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$0.198

$0.164

$0.147

Verical

USA . 54,409 parts In-Stock

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$0.183

54,409

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$0.183

Distributors (In-Stock)

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Digiode

USA . 2,041 parts In-Stock

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$0.155

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2,041

$0.155

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Vyrian

USA . 2,133 parts In-Stock

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$0.163

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$0.163

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Chip Stock

USA . 11,500 parts In-Stock

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11,500

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EMSNET

USA . 2,030 parts In-Stock

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Euro-Tech

UK . 400 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 42,211 parts In-Stock

1+ parts

$0.139

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42,211

$0.139

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Corphita

USA . 979 parts In-Stock

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$0.147

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979

$0.147

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Corohmni

South Africa . 467 parts In-Stock

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$0.156

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467

$0.156

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Component Stockers USA

USA . 98,133 parts In-Stock

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$0.170

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$0.160

1k+ parts

$0.140

10k+ parts

$0.140

98,133

$0.170

$0.160

$0.140

$0.140

Native Components

USA . 329 parts In-Stock

1+ parts

$35.520

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$34.099

329

$35.520

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$34.099

Northwest PG Solutions

USA . 1,289 parts In-Stock

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$39.072

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1,289

$39.072

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Perfect Parts

USA . 125,039 parts In-Stock

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Continental Prestige Electronics

USA . 66,185 parts In-Stock

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$0.139

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Kepictronics

USA . 20,000 parts In-Stock

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Kulean Microsystems

USA . 8,376 parts In-Stock

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Problanco Electronics

Mexico . 6,620 parts In-Stock

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A-Z Elektronik GmbH

Germany . 2,951 parts In-Stock

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SupplyDigital Components

Austria . 2,927 parts In-Stock

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Glotronic Ltd.

UK . 2,780 parts In-Stock

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2,780

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TANS Electronics

Latvia . 2,741 parts In-Stock

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UHIMA Technologies

Türkiye . 393 parts In-Stock

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GreenTree Electronics

Israel . 50 parts In-Stock

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Authorized Procurement Solutions

USA . 10 parts In-Stock

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Overview

Unlock the power of precise control with the 2N5060RLRAG by Onsemi. Crafted with top-quality materials and expert engineering, this Silicon Controlled Rectifier (SCR) boasts reliability and efficiency in a variety of applications. From industrial machinery to electronic devices, this SCR offers unparalleled performance, ensuring smooth operation and optimal functionality. Trust Onsemi to deliver cutting-edge technology that enhances your projects while providing unmatched value and peace of mind. Experience the difference with the 2N5060RLRAG.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material ensures durability and longevity of the product, making it suitable for various applications.

Maximum DC Gate Trigger Current: 0.2 mA

Low gate trigger current allows for precise control and efficient operation of the SCR.

Configuration: SINGLE

Single configuration simplifies installation and maintenance, making it ideal for easy integration into different systems.

Non Repetitive Peak On-state Current: 10 A

High on-state current capability enables the SCR to handle heavy loads effectively.

Package Shape: ROUND

Round package shape provides versatility in mounting options and helps in efficient heat dissipation.

Terminal Form: THROUGH-HOLE

Through-hole terminals ensure secure connections and ease of soldering during installation.

Maximum On-state Current: 0.51 A

High on-state current rating allows for reliable performance under load conditions.

Maximum Leakage Current: 0.05 mA

Low leakage current ensures minimal power loss and improved efficiency of the SCR.

Repetitive Peak Reverse Voltage: 30 V

Sufficient reverse voltage rating makes the SCR suitable for applications requiring reverse polarity protection.

No. of Terminals: 3

Having three terminals enables easy connection and integration of the SCR into different circuit configurations.

Package Style (Meter): CYLINDRICAL

Cylindrical package style provides mechanical robustness and easy handling of the SCR.

Maximum Operating Temperature: 110 °C

High operating temperature range allows the SCR to be used in a variety of environmental conditions.

Trigger Device Type: SCR

Being an SCR ensures reliable and fast switching performance for the device.

Minimum Operating Temperature: -40 °C

Wide operating temperature range enables the SCR to operate in extreme cold conditions as well.

Terminal Finish: TIN SILVER COPPER

The use of high-quality terminal finish enhances the conductivity and reliability of the SCR connections.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy mounting and connecting the SCR onto circuit boards.

Maximum RMS On-state Current: 0.8 A

High RMS on-state current rating allows for continuous and reliable operation under varying loads.

Maximum DC Gate Trigger Voltage: 1.2 V

Low gate trigger voltage ensures efficient control and switching of the SCR with minimal power loss.

Repetitive Peak Off-state Voltage: 30 V

Consistent off-state voltage rating provides stable performance and protection against voltage spikes.

Maximum Holding Current: 10 mA

Sufficient holding current capability ensures the SCR remains in the on-state even under transient conditions.

Nominal Circuit Commutated Turn-off Time: 10 us

Fast turn-off time allows for quick response and control of the load circuit, improving overall system efficiency.

Peak Reflow Temperature °C: 260

High peak reflow temperature tolerance makes the SCR suitable for reflow soldering processes without affecting its performance.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N5060RLRAG attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Onsemi

Specs

Nominal Circuit Commutated Turn-off Time:

10 us

Configuration:

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

1.2 V

Maximum Holding Current:

10 mA

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

Maximum Leakage Current:

.05 mA

Non Repetitive Peak On-state Current:

10 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

.51 A

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum RMS On-state Current:

.8 A

Repetitive Peak Off-state Voltage:

30 V

Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

2N5060RLRAG Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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